SYSTEMES D'ELECTRONS DANS LES NANOSTRUCTURES SEMI-CONDUCTRICES A CONFINEMENT QUANTIQUE DANS 2 OU 3 DIRECTIONS PDF Download
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Author: SOPHIE.. HAMEAU
Publisher:
ISBN:
Category :
Languages : fr
Pages : 166
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Book Description
CETTE THESE CONSTITUE UNE ETUDE, PAR MAGNETOSPECTROSCOPIE AUX ONDES MILLIMETRIQUES, SUBMILLIMETRIQUES ET DANS L'INFRAROUGE LOINTAIN, DE LA STRUCTURE ELECTRONIQUE DES SYSTEMES CONFINES DE SEMI-CONDUCTEURS TELS QUE LES FILS (SYSTEMES 1D) OU LES BOITES QUANTIQUES (SYSTEMES 0D). UNE FACON DE REALISER DES STRUCTURES DE DIMENSIONS SUBMICRONIQUES ET NANOMETRIQUES EST DE MODULER LATERALEMENT LA DENSITE ELECTRONIQUE D'UN GAZ BIDIMENSIONNEL D'ELECTRONS (GE2D) CONTENU DANS UNE HETEROSTRUCTURE A DOPAGE SELECTIF. CETTE MODULATION EST OBTENUE PAR LITHOGRAPHIE ELECTRONIQUE SUIVIE D'UNE GRAVURE IONIQUE. NOUS AVONS ETUDIE, D'UNE PART, LE CONFINEMENT ET LA POPULATION ELECTRONIQUE DANS DES FILS GRAVES GAAS/A1GAAS. D'AUTRE PART, NOUS AVONS ETUDIE L'INFLUENCE DE LA PROFONDEUR DE GRAVURE SUR LA DENSITE D'UN GE2D CONTENU DANS UNE HETEROSTRUCTURE SI/SIGE. CETTE ETUDE THEORIQUE ET EXPERIMENTALE A MONTRE QU'IL ETAIT POSSIBLE, SELON LA PROFONDEUR DE BARRIERE DOPEE GRAVEE, DE REALISER TOUTES LES ETAPES DE MODULATION DU GAZ BIDIMENSIONNEL, A SAVOIR UN GAZ BIDIMENSIONNEL FAIBLEMENT MODULE, PUIS UN RESEAU D'ANTIPLOTS (GE2D COMPORTANT UN RESEAU PERIODIQUE DE ZONES VIDES D'ELECTRONS) ET ENFIN UN RESEAU DE BOITES PARFAITEMENT ISOLEES LES UNES DES AUTRES DONT LA TAILLE EFFECTIVE DIMINUE FORTEMENT AVEC LA GRAVURE. UNE AUTRE MANIERE D'OBTENIR DES SYSTEMES CONFINES D'ELECTRONS EST LA CROISSANCE AUTO-ORGANISEE UTILISANT LE GRAND DESACCORD DE MAILLE ENTRE DEUX MATERIAUX. NOUS AVONS ETUDIE LE COUPLAGE ENTRE LES ELECTRONS ET LES PHONONS OPTIQUES DANS DES BOITES QUANTIQUES INAS, NE CONTENANT QU'UN SEUL ELECTRON, OBTENUES SUR UN SUBSTRAT GAAS. DANS LES SEMI-CONDUCTEURS MASSIFS, LES GAZ BIDIMENSIONNELS OU LES FILS QUANTIQUES, LES PHONONS OPTIQUES JOUENT UN ROLE FONDAMENTAL. EN EFFET, L'EMISSION DE PHONONS OPTIQUES EST LE MECANISME DE LOIN LE PLUS EFFICACE POUR LA RELAXATION DES ELECTRONS PLACES DANS DES NIVEAUX EXCITES. NOUS AVONS MONTRE L'EXISTENCE D'UN COUPLAGE FORT ENTRE LES ELECTRONS ET LES PHONONS AU SEIN DES BOITES QUANTIQUES CONDUISANT A LA FORMATION D'ETATS HYBRIDES ELECTRON-PHONON(S) : DES POLARONS A LONGUE VIE. LA RELAXATION DES PORTEURS PAR EMISSION DE PHONONS OPTIQUES EST ALORS IMPOSSIBLE DANS LES BOITES QUANTIQUES. CES POLARONS CONSTITUENT UN ASPECT NOUVEAU DE L'INTERACTION ELECTRON-PHONON DANS LES SEMI-CONDUCTEURS QUI POURRAIT AVOIR DES IMPLICATIONS IMPORTANTES SUR LA RELAXATION DES PORTEURS DANS LES NANOSTRUCTURES.
Author: SOPHIE.. HAMEAU
Publisher:
ISBN:
Category :
Languages : fr
Pages : 166
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Book Description
CETTE THESE CONSTITUE UNE ETUDE, PAR MAGNETOSPECTROSCOPIE AUX ONDES MILLIMETRIQUES, SUBMILLIMETRIQUES ET DANS L'INFRAROUGE LOINTAIN, DE LA STRUCTURE ELECTRONIQUE DES SYSTEMES CONFINES DE SEMI-CONDUCTEURS TELS QUE LES FILS (SYSTEMES 1D) OU LES BOITES QUANTIQUES (SYSTEMES 0D). UNE FACON DE REALISER DES STRUCTURES DE DIMENSIONS SUBMICRONIQUES ET NANOMETRIQUES EST DE MODULER LATERALEMENT LA DENSITE ELECTRONIQUE D'UN GAZ BIDIMENSIONNEL D'ELECTRONS (GE2D) CONTENU DANS UNE HETEROSTRUCTURE A DOPAGE SELECTIF. CETTE MODULATION EST OBTENUE PAR LITHOGRAPHIE ELECTRONIQUE SUIVIE D'UNE GRAVURE IONIQUE. NOUS AVONS ETUDIE, D'UNE PART, LE CONFINEMENT ET LA POPULATION ELECTRONIQUE DANS DES FILS GRAVES GAAS/A1GAAS. D'AUTRE PART, NOUS AVONS ETUDIE L'INFLUENCE DE LA PROFONDEUR DE GRAVURE SUR LA DENSITE D'UN GE2D CONTENU DANS UNE HETEROSTRUCTURE SI/SIGE. CETTE ETUDE THEORIQUE ET EXPERIMENTALE A MONTRE QU'IL ETAIT POSSIBLE, SELON LA PROFONDEUR DE BARRIERE DOPEE GRAVEE, DE REALISER TOUTES LES ETAPES DE MODULATION DU GAZ BIDIMENSIONNEL, A SAVOIR UN GAZ BIDIMENSIONNEL FAIBLEMENT MODULE, PUIS UN RESEAU D'ANTIPLOTS (GE2D COMPORTANT UN RESEAU PERIODIQUE DE ZONES VIDES D'ELECTRONS) ET ENFIN UN RESEAU DE BOITES PARFAITEMENT ISOLEES LES UNES DES AUTRES DONT LA TAILLE EFFECTIVE DIMINUE FORTEMENT AVEC LA GRAVURE. UNE AUTRE MANIERE D'OBTENIR DES SYSTEMES CONFINES D'ELECTRONS EST LA CROISSANCE AUTO-ORGANISEE UTILISANT LE GRAND DESACCORD DE MAILLE ENTRE DEUX MATERIAUX. NOUS AVONS ETUDIE LE COUPLAGE ENTRE LES ELECTRONS ET LES PHONONS OPTIQUES DANS DES BOITES QUANTIQUES INAS, NE CONTENANT QU'UN SEUL ELECTRON, OBTENUES SUR UN SUBSTRAT GAAS. DANS LES SEMI-CONDUCTEURS MASSIFS, LES GAZ BIDIMENSIONNELS OU LES FILS QUANTIQUES, LES PHONONS OPTIQUES JOUENT UN ROLE FONDAMENTAL. EN EFFET, L'EMISSION DE PHONONS OPTIQUES EST LE MECANISME DE LOIN LE PLUS EFFICACE POUR LA RELAXATION DES ELECTRONS PLACES DANS DES NIVEAUX EXCITES. NOUS AVONS MONTRE L'EXISTENCE D'UN COUPLAGE FORT ENTRE LES ELECTRONS ET LES PHONONS AU SEIN DES BOITES QUANTIQUES CONDUISANT A LA FORMATION D'ETATS HYBRIDES ELECTRON-PHONON(S) : DES POLARONS A LONGUE VIE. LA RELAXATION DES PORTEURS PAR EMISSION DE PHONONS OPTIQUES EST ALORS IMPOSSIBLE DANS LES BOITES QUANTIQUES. CES POLARONS CONSTITUENT UN ASPECT NOUVEAU DE L'INTERACTION ELECTRON-PHONON DANS LES SEMI-CONDUCTEURS QUI POURRAIT AVOIR DES IMPLICATIONS IMPORTANTES SUR LA RELAXATION DES PORTEURS DANS LES NANOSTRUCTURES.
Author: Ahmed Belasri
Publisher: Springer Nature
ISBN: 9811554447
Category : Technology & Engineering
Languages : en
Pages : 659
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Book Description
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.
Author: John Wilfred Orton
Publisher:
ISBN: 0199695822
Category : Science
Languages : en
Pages : 529
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Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Olivier Pluchery
Publisher: World Scientific
ISBN: 1800613415
Category : Science
Languages : en
Pages : 356
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Book Description
What is a plasmon? Is it a particle, like a photon or a wave? Plasmonics stands at the frontier of condensed matter physics, which is the world of electrons, optics and of photons. Plasmonics is one of the most active fields in nanophotonics. This book begins by exploring the concepts behind waves, and the electromagnetic description of light when it interacts with metals; it dedicates every chapter thereafter to all aspects of plasmonics. In particular, the surface plasmon polariton wave is explained in full detail, as well as the localized surface plasmon resonance of metallic nanoparticles. The active research area opened by plasmonics, as well as its applications, are also briefly explained, such as advanced biosensing, subwavelength waveguiding, quantum plasmonics, nanoparticle-based cancer therapies, optical nano-antenna and high-efficiency photovoltaic cells.The book is adapted for graduate students and places a special emphasis on providing complete explanations of the fundamental concepts of plasmonics. Further, each of these concepts is illustrated with examples drawn from the most recent scientific literature. Each chapter ends with a set of exercises that will help the reader revise the concepts and go deeper into the world of plasmonics. More than 70 exercises are included.
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
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Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author: Rolf Binder
Publisher: World Scientific
ISBN: 9813148764
Category : Science
Languages : en
Pages : 517
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Book Description
This book provides a comprehensive state-of-the-art overview of the optical properties of graphene. During the past decade, graphene, the most ideal and thinnest of all two-dimensional materials, has become one of the most widely studied materials. Its unique properties hold great promise to revolutionize many electronic, optical and opto-electronic devices. The book contains an introductory tutorial and 13 chapters written by experts in areas ranging from fundamental quantum mechanical properties to opto-electronic device applications of graphene.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 190
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Book Description
Author: Agnes Buka
Publisher: World Scientific
ISBN: 1848167997
Category : Science
Languages : en
Pages : 299
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Book Description
The book intends to give a state-of-the-art overview of flexoelectricity, a linear physical coupling between mechanical (orientational) deformations and electric polarization, which is specific to systems with orientational order, such as liquid crystals. Chapters written by experts in the field shed light on theoretical as well as experimental aspects of research carried out since the discovery of flexoelectricity. Besides a common macroscopic (continuum) description the microscopic theory of flexoelectricity is also addressed. Electro-optic effects due to or modified by flexoelectricity as well as various (direct and indirect) measurement methods are discussed. Special emphasis is given to the role of flexoelectricity in pattern-forming instabilities. While the main focus of the book lies in flexoelectricity in nematic liquid crystals, peculiarities of other mesophases (bent-core systems, cholesterics, and smectics) are also reviewed. Flexoelectricity has relevance to biological (living) systems and can also offer possibilities for technical applications. The basics of these two interdisciplinary fields are also summarized.
Author: Matthias Gross
Publisher: Routledge
ISBN: 1317964675
Category : Business & Economics
Languages : en
Pages : 427
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Book Description
Once treated as the absence of knowledge, ignorance today has become a highly influential topic in its own right, commanding growing attention across the natural and social sciences where a wide range of scholars have begun to explore the social life and political issues involved in the distribution and strategic use of not knowing. The field is growing fast and this handbook reflects this interdisciplinary field of study by drawing contributions from economics, sociology, history, philosophy, cultural studies, anthropology, feminist studies, and related fields in order to serve as a seminal guide to the political, legal and social uses of ignorance in social and political life. Chapter 33 of this book is freely available as a downloadable Open Access PDF under a Creative Commons Attribution-Non Commercial-No Derivatives 4.0 license available here: https://tandfbis.s3-us-west-2.amazonaws.com/rt-files/docs/Open+Access+Chapters/9780415718967_oachapter33.pdf
Author: Jean Daillant
Publisher: Springer Science & Business Media
ISBN: 3540486968
Category : Science
Languages : en
Pages : 347
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Book Description
The reflection of and neutrons from surfaces has existed as an x-rays exp- imental for almost it is in the last technique fifty Nevertheless, only years. decade that these methods have become as of enormously popular probes This the surfaces and interfaces. to be due to of several appears convergence of intense different circumstances. These include the more n- availability be measured orders tron and sources that can over (so reflectivity x-ray many of and the much weaker surface diffuse can now also be magnitude scattering of thin films and studied in some the detail); growing importance multil- basic the realization of the ers in both and technology research; important which in the of surfaces and and role roughness plays properties interfaces; the of statistical models to characterize the of finally development topology its and its characterization from on roughness, dependence growth processes The of and to surface scattering experiments. ability x-rays neutro4s study four five orders of in scale of surfaces over to magnitude length regardless their and also their to ability probe environment, temperature, pressure, etc. , makes these the choice for buried interfaces often probes preferred obtaining information about the microstructure of often in statistical a global surfaces, the local This is manner to complementary imaging microscopy techniques, of such studies in the literature witnessed the veritable by explosion published the last few Thus these lectures will useful for over a resource years.
