Synthesis of Gallium Nitride by Laser-assisted Metal Organic Vapor Phase Epitaxy PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Synthesis of Gallium Nitride by Laser-assisted Metal Organic Vapor Phase Epitaxy PDF full book. Access full book title Synthesis of Gallium Nitride by Laser-assisted Metal Organic Vapor Phase Epitaxy by Matthew J. Mitchell. Download full books in PDF and EPUB format.
Author: Matthew J. Mitchell
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Matthew J. Mitchell
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Hossein Rabiee Golgir
Publisher:
ISBN: 9780355139907
Category : Chemical vapor deposition
Languages : en
Pages : 0
Get Book Here
Book Description
The m-plane-oriented gallium nitride nanoplates were successfully grown on silicon substrates at 450 °C, using CO2 laser-assisted metal organic chemical vapor deposition with perpendicular geometries.
Author: David J. Miller
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 131
Get Book Here
Book Description
Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.
Author: Ling Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages : 649
Get Book Here
Book Description
Author: Xiaolong Fang
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 278
Get Book Here
Book Description
Author: Michael D. Reed
Publisher:
ISBN:
Category :
Languages : en
Pages : 524
Get Book Here
Book Description
Author: Dirk Ehrentraut
Publisher: Springer Science & Business Media
ISBN: 3642048307
Category : Science
Languages : en
Pages : 337
Get Book Here
Book Description
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author: Vaibhav Uday Chaudhari
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
Get Book Here
Book Description
It was also found that the polycrystalline nature is as a result of polycrystalline nature of LT-GaN grown on the InN template. It was also shown that formation of completely enclosed uniformly distributed nanovoids were very essential to grow crack free thick GaN which is highly textured in 0002 orientation. It was also shown that GaN grown was very high quality crystal free of Indium. GaN growth on Indium metal deposited on Silicon was also studied. Depending on growth mode and conditions GaN 40 micron thick film and 100nm x 5000nm GaN wafers were successfully grown in same reactor.
Author: Hyun Jong Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 266
Get Book Here
Book Description
Crack-free, 3 mum GaN films were grown on GaN/AlGaN/Si template at 850°C although cracks developed when the thickness exceeded 7 mum. It was possible, however, to grow crack-free polycrystalline 40 mum thick GaN on Si using InN NRs as a buffer material.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
Get Book Here
Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
