Author: 許紹倫
Publisher:
ISBN:
Category :
Languages : en
Pages : 97
Book Description
Surface Pretreatment in AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Post Gate Annealing
Author: 許紹倫
Publisher:
ISBN:
Category :
Languages : en
Pages : 97
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 97
Book Description
Investigation and Fabrication of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Transistors with Surface Treatment and the I-ZnO Gate Dielectric Layer
Author: 邱雅蘭
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Performance with Al2O3/ZrO2 Stacked Gate Dielectric Layers
Author: 黃晟瑜
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Enhancement Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Self-Aligned Gate-Recessed Process
Author: 徐健軒
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
Book Description
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment
Author: 楊舜凱
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
Gallium Nitride Power Devices
Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767615
Category : Science
Languages : en
Pages : 298
Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Publisher: CRC Press
ISBN: 1351767615
Category : Science
Languages : en
Pages : 298
Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Fabrication and Investigation of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Field-effect Transistors with Gate Insulators Grown Using PEC Oxidation Method
Author: 黃立賢
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
Book Description
Preparation and Characterization of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Author: 黃健峻
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description
Normally-off AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with RF-Sputtered Hafnium Oxide
Author: 楊富鈞
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Effects of Post-annealing on the Passivation Interface Characteristics of AlGaN/GaN High Electron Mobility Transistors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description