Author: Lisa V. Rozario
Publisher:
ISBN:
Category : Materials at high temperatures
Languages : en
Pages : 226

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Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 9783527629084
Category : Science
Languages : en
Pages : 520

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Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238

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Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 143987431X
Category : Technology & Engineering
Languages : en
Pages : 1041

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Book Description
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Author: IEEE Electron Devices Society
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 348

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Book Description
These papers discuss the need for and status of high temperature electronics development with particular reference to semiconductor materials, devices and applications, passive components, ohmic contacts and metallizations, testing at high temperatures, and thermal management.

Author: Dharmendra Singh Yadav
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306

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Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291850
Category : Technology & Engineering
Languages : en
Pages : 249

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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Author: HUNG-CHI. CHANG
Publisher:
ISBN:
Category :
Languages : en
Pages : 1

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Book Description
FUNDAMENTAL TECHNIQUES WERE DEVELOPED FOR THE FABRICATION OF SIC DEVICES IN GENERAL AND UNIPOLAR FIELD-EFFECT TRANSISTORS IN PARTICULAR. THE DIFFUSION OF AL VAPOR IN ALPHA-SIC WAS QUANTITATIVELY INVESTIGATED AND THE DIFFUSION-JUNCTION PROCESS WAS DEVELOPED. HEXAGONAL SIC WASGROWN IN THE FORM OF THIN PLATELETS WHICH ARE READY FOR DEVICE FABRICATION. DEVICE FABRICATION PROCESSES INCLUDE THE SINGLE-AND DOUBLE-GATE FUSED JUNCTIONS, SINGLE-GATE GROWN JUNCTIONS, AND SINGLEAND DOUBLE-GATE DIFFUSED JUNCTIONS. ONLY THE DOUBLE-GATE DIFFUSED JUNCTION PROCESS PRODUCED UNIPOLAR TRANSISTORS WHICH EXHIBIT POWER GAIN. THESE DEVICES ARE STILL IN A PRIMITIVE STAGE OF DEVELOPMENT AND WILL REQUIRE FURTHER DEVELOPMENT BEFORE THEY BECOME PRACTICAL DEVICES. AN EXPERI-MENTAL MODEL OF A SIC DOUBLE-GATE UNIPOLAR TRAN-SISTOR WAS DEVELOPED THAT EXHIBITED AC POWER GAIN AS HIGH AS 380 AT ROOM TEMPERATURE AND 7 AT 500 C.

Author: Committee on Materials for High-Temperature Semiconductor Devices
Publisher: National Academies Press
ISBN: 030959653X
Category : Technology & Engineering
Languages : en
Pages : 136

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Book Description
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.

Author: Gerhard Pensl
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 880

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Book Description