Author: Hailan Duan
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
Book Description
Study of Hot Wire Chemical Vapor Deposition of Amorphous Hydrogenated Silicon Using Optical Diagnostics
Author: Hailan Duan
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
Book Description
The Influence of Charge Effect on the Growth of Hydrogenated Amorphous Silicon by the Hot-wire Chemical Vapor Deposition Technique
Author:
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Book Description
Kinetic Roughening During Hot-wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
Author: Brent Andrew Sperling
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
The Influence of Charge Effect on the Growth of Hydrogenated Amorphous Silicon by the Hot-wire Chemical Vapor Deposition Technique
Author: Qi Wang
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 4
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 4
Book Description
Hot-wire chemical vapour deposition of amorphous silicon and the application in solar cells
Author: Kornelis Frits Feenstra
Publisher:
ISBN: 9789039320181
Category :
Languages : en
Pages : 118
Book Description
Publisher:
ISBN: 9789039320181
Category :
Languages : en
Pages : 118
Book Description
Low Temperature Growth of Amorphous Silicon Thin Film
Author: Maibi Aaron Malape
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 154
Book Description
The growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS, FITR, ERDA, XRD. XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 154
Book Description
The growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS, FITR, ERDA, XRD. XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.
Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique
Author: Matthew Alan Ring
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Deposition of Hydrogenated Amorphous Silicon with the Hot Wire Technique
Author: Edith C. Molenbroek
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 320
Book Description
A-Si
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 2
Book Description
We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.
Publisher:
ISBN:
Category :
Languages : en
Pages : 2
Book Description
We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 960
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 960
Book Description