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Author: Hongxia Tang
Publisher:
ISBN:
Category :
Languages : en
Pages : 111
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Book Description
Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today's circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 [micrometer] mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated.
Author: Hongxia Tang
Publisher:
ISBN:
Category :
Languages : en
Pages : 111
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Book Description
Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today's circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 [micrometer] mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated.
Author: Anna N. Rudiakova
Publisher: Springer Science & Business Media
ISBN: 1402046391
Category : Technology & Engineering
Languages : en
Pages : 140
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Book Description
Advanced Design Techniques for RF Power Amplifiers provides a deep analysis of theoretical aspects, modelling, and design strategies of RF high-efficiency power amplifiers. The book can be used as a guide by scientists and engineers dealing with the subject and as a text book for graduate and postgraduate students. Although primarily intended for skilled readers, it provides an excellent quick start for beginners.
Author: Chris Bowick
Publisher: Newnes
ISBN: 9780750699464
Category : Amplifiers (Electronics)
Languages : en
Pages : 180
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Book Description
Essential reading for experts in the field of RF circuit design and engineers needing a good reference. This book provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters. It also covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail. *Provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters *Covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail
Author: Reinhold Ludwig
Publisher:
ISBN: 9780131224759
Category : Radio circuits
Languages : en
Pages : 642
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Book Description
For upper-level Electrical Engineering introductory courses in RF Circuit Design and analog integratedcircuits.This practical and comprehensive book introduces RF circuit design fundamentals with an emphasis on design methodologies. * Provides MATLAB routines to carry out simple transmission line computations and allow the graphical display of the resulting impedance behaviors as part of the Smith Chart. * Allows students to implement these software tools on their own PC. All m-files will be included on a bound in CD-ROM. * Presents RF Amplifier Designs, including small and large signal designs, narrow versus broad band, low noise, and many others. * Provides students with useful broad-based knowledge of common amplifier designs used in the industry. * Discusses Matching Networks, such as T and P matching networks and single and double stub matching. It also includes Discrete and Microstrip Line matching techniques with computer simulations...* Presents Scattering parameterssuch as realistic listings of S-parameters for transistors and transmission line. * Highlights practical use of S-parameters in circuit design and performance evaluation. resistor, capacitor, and inductor networks. It also includes simulations in MATLAB to provide graphical display of circuit behavior and performance analysis. * Introduces the Smith Chart as a design tool to monitor electric behavior of circuits. * Introduces the generic forms of Oscillators and Mixers, including negative resistance condition, fixed-frequency, and YIG-tuned designs. * Explains the most common oscillator designs used in many RF systems. * Provides an overview of common filter types, including low, high, bandpass, Butterworth, and Chebyshev filters. * Provides design tools to enable students to develop a host of practically realizable filters. * Discusses the high-frequency behavior of common circuit components, including the behavior of resistors, capacitors, and inductors. * Helps students understand the difference of low versus high frequency responses. * Introduces the theory of distributed parameters through a discussion on Transmission Lines. This includes line parameters, sources and load terminations, and voltage and current waves. circuits. * Analyzes active/passive RF circuits through various network description models, especially the two-port network. This discussion also covers impedance, admittance, ABCD, h-parameter networks, and interrelations. * Includes a number of important pedagogical features--Intersperses examples throughout each chapter, and includes self-written MATLAB routines and circuit simulations by a commercial RF software package. * Assists students by clarifying and explaining the theoretical developments.
Author: Domine Leenaerts
Publisher: Springer Science & Business Media
ISBN: 0306479788
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
Applicable for bookstore catalogue
Author: Hugo Veenstra
Publisher: Springer Science & Business Media
ISBN: 1402068840
Category : Technology & Engineering
Languages : en
Pages : 256
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Book Description
Realizing maximum performance from high bit-rate and RF circuits requires close attention to IC technology, circuit-to-circuit interconnections (i.e., the ‘interconnect’) and circuit design. This detailed book covers each of these topics from theory to practice, with sufficient detail to help you produce circuits that are ‘first-time right’. Many practical circuit examples are included to demonstrate the interplay between technology, interconnect and circuit design.
Author: Fakhfakh, Mourad
Publisher: IGI Global
ISBN: 1466666285
Category : Technology & Engineering
Languages : en
Pages : 488
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Book Description
Improving the performance of existing technologies has always been a focal practice in the development of computational systems. However, as circuitry is becoming more complex, conventional techniques are becoming outdated and new research methodologies are being implemented by designers. Performance Optimization Techniques in Analog, Mix-Signal, and Radio-Frequency Circuit Design features recent advances in the engineering of integrated systems with prominence placed on methods for maximizing the functionality of these systems. This book emphasizes prospective trends in the field and is an essential reference source for researchers, practitioners, engineers, and technology designers interested in emerging research and techniques in the performance optimization of different circuit designs.
Author: Christopher Bowick
Publisher: Elsevier
ISBN: 0080516289
Category : Technology & Engineering
Languages : en
Pages : 177
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Book Description
Essential reading for experts in the field of RF circuit design and engineers needing a good reference. This book provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters. It also covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail. Provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters Covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail
Author: Jiann-Shiun Yuan
Publisher: Springer
ISBN: 9811008841
Category : Technology & Engineering
Languages : en
Pages : 108
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Book Description
The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.
Author: Pooyan Sakian
Publisher: Springer Science & Business Media
ISBN: 1461421225
Category : Technology & Engineering
Languages : en
Pages : 181
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Book Description
This book discusses a number of challenges faced by designers of wireless receivers, given complications caused by the shrinking of electronic and mobile devices circuitry into ever-smaller sizes and the resulting complications on the manufacturability, production yield, and the end price of the products. The authors describe the impact of process technology on the performance of the end product and equip RF designers with countermeasures to cope with such problems. The mechanisms by which these problems arise are analyzed in detail and novel solutions are provided, including design guidelines for receivers with robustness to process variations and details of circuit blocks that obtain the required performance level. Describes RF receiver frontends and their building blocks from a system- and circuit-level perspective; Provides system-level analysis of a generic RF receiver frontend with robustness to process variations; Includes details of CMOS circuit design at 60GHz and reconfigurable circuits at 60GHz; Covers millimeter-wave circuit design with robustness to process variations.
