Studies of Low Pressure Chemical Vapour Deposition of Beta Silicon Carbide PDF Download
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Author: Sajid Ishaq
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Sajid Ishaq
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
![The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor PDF](https://books.google.com/books/content/images/frontcover/GZ9RNwAACAAJ?fife=w80-h100)
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Gladys Felton
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ISBN:
Category :
Languages : en
Pages : 216
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Author: Yi-Tong Shi
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Category : Silicon carbide
Languages : en
Pages : 152
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Author: W. Ahmed
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Category :
Languages : en
Pages : 0
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Author:
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ISBN:
Category :
Languages : en
Pages : 23
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Phase I conclusively showed the feasibility of rational design of single molecule-source reagents that could lead to improvements in the chemical vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their utility in Beta-silicon carbide CVD investigated. Dramatic differences in the CVD process resulted from small changes in the reagent structure. A strained cyclic molecule, 1,3-disilacyclobutane, allowed growth of a Beta-silicon carbide film at a temperature>300 deg C lower than was possible with a similar straight chain reagent. Furthermore, the highest quality film was grown from the analogous chlorinated cyclic source reagent: 1,1,3,3 tetrachloro-1,3- disilacyclobutane. We propose that decomposition of the cyclic precursors directly produces intermediates that can lead to deposition of stoichiometric silicon carbide. The Phase I results clearly showed that Beta-silicon carbide CVD can be improved by molecular engineering of the source reagents. Cyclic precursors are promising for both the deposition of single crystal films at high temperature and for polycrystalline and single crystal films at low temperature. In Phase II we will optimize the precursor for low temperature deposition and the integration of silicon and silicon carbide HBT device structures.
Author: Irvin Berman
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ISBN:
Category : Annealing of crystals
Languages : en
Pages : 24
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Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.
Author: Wei Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
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Author: Robert F. Davis
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
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The research of this reporting period has involved (1) the chemical vapor deposition (CVD) of Beta-silicon carbide on off-axis silicon (100), (2) the growth of Beta- and alpha-SiC on monocrystalline alpha-SiC substrates, (3) high temperature ion implantation, and damage production studies, (4) the continued development of contacts for n- and p-type SiC, (5) reactive ion and plasma etching, and (6) the fabrication and evaluation of MESFETs and MOSFETs in Bet-SiC. Keywords: Doping; Aluminum nitride; Electron microscopy; Secondary ion mass spectroscopy; Rutherford back-scattering.
