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Author: Shengkai Wang
Publisher: CRC Press
ISBN: 1000455769
Category : Technology & Engineering
Languages : en
Pages : 192
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Book Description
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Author: Shengkai Wang
Publisher: CRC Press
ISBN: 1000455769
Category : Technology & Engineering
Languages : en
Pages : 192
Get Book Here
Book Description
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Author: Olof Engström
Publisher: Cambridge University Press
ISBN: 1107005930
Category : Science
Languages : en
Pages : 369
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Book Description
A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Author:
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ISBN:
Category :
Languages : en
Pages : 916
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Book Description
Author: C. M. Dyson
Publisher:
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Category : Image processing
Languages : en
Pages :
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Category : Job analysis
Languages : en
Pages : 32
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Category : Military occupation
Languages : en
Pages : 24
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Author: B. Jayant Baliga
Publisher: Brooks/Cole
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 632
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Category : Astronautics
Languages : en
Pages : 1730
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Author: William O'Grady
Publisher: University of Chicago Press
ISBN: 0226620786
Category : Language Arts & Disciplines
Languages : en
Pages : 422
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Book Description
Syntactic Development presents a broad critical survey of the research literature on child language development. Giving balanced coverage to both theoretical and empirical issues, William O'Grady constructs an up-to-date picture of how children acquire the syntax of English. Part 1 offers an overview of the developmental data pertaining to a range of syntactic phenomena, including word order, subject drop, embedded clauses, wh-questions, inversion, relative clauses, passives, and anaphora. Part 2 considers the various theories that have been advanced to explain the facts of development as well as the learnability problem, reporting on work in the mainstream formalist framework but also considering the results of alternative approaches. Covering a wide range of perspectives in the modern study of syntactic development, this book is an invaluable reference for specialists in the field of language acquisition and provides an excellent introduction to the acquisition of syntax for students and researchers in psychology, linguistics, and cognitive science.
Author: United States. Department of the Army
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 132
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Book Description
