Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures PDF Download
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Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 386
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Book Description
Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 386
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Book Description
Author: D. A. Buchanan
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 408
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.
Author: David J Dumin
Publisher: World Scientific
ISBN: 981448945X
Category : Technology & Engineering
Languages : en
Pages : 281
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Book Description
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Author: Spiros Haralambos Anastasiadis
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 232
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Book Description
Author: Terry M. Tritt
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 434
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Book Description
The presentations from the symposium are grouped into the following topics: skutterudites, superlattice, new materials, quantum wires and dots, half-heusler alloys and quasicrystals, TE theory, thermionics, clathrates, and thin films TE. In addition, poster sessions include the following: semiconductors with tetrahedral anions as potential thermoelectric materials, lattice dynamics study of anisotropic heat conduction in supperlattices, structure and thermoelectric properties of new quaternary tin and lead Bismuth selenides, attributes of the Seebeck coefficient of Bismuth microwire array composites, and High-Z Lanthanum-Cerium Hexaborate thin films for low-temperature applications. c. Book News Inc.
Author: David G. Seiler
Publisher: American Institute of Physics
ISBN:
Category : Computers
Languages : en
Pages : 868
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Book Description
The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.
Author: Antonio Chandrea Oliver
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
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Book Description
Author: R. W. Schwartz
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
Author: Surajit Sen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
These 38 papers from the April 2000 symposium study granular structure, granular flows, nonlinear waves in granular media, vibrated and rotated granular media, and stress distributions. Topics include jamming in liquids and granular materials, nuclear magnetic resonance studies of granular flows, the blueprint of a concept for a nozzle- free inkjet printer, mixing and segregation processes in a Turbula blender, persistence of granular structure during die compaction of ceramic powders, and humidity-induced cohesion effects in granular media. c. Book News Inc.
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
