State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V PDF Download
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Author: H. M. Ng
Publisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Author: H. M. Ng
Publisher: The Electrochemical Society
ISBN: 9781566774192
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
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Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author: Hadis Morkoç
Publisher: John Wiley & Sons
ISBN: 3527628460
Category : Technology & Engineering
Languages : en
Pages : 1311
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Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Author: Xuying Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Book Description
Author:
Publisher:
ISBN:
Category : Electrochemistry
Languages : en
Pages : 1066
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Book Description
Author: Karl Goser
Publisher: Springer Science & Business Media
ISBN: 3662054213
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
An accessible introduction for electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.
Author: Rolf E. Hummel
Publisher: Springer
ISBN: 9401749140
Category : Technology & Engineering
Languages : en
Pages : 412
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Book Description
It is quite satisfying for an author to learn that his brainchild has been favorably accepted by students as well as by professors and thus seems to serve some useful purpose. This horizontally integrated text on the electronic properties of metals, alloys, semiconductors, insulators, ceramics, and poly meric materials has been adopted by many universities in the United States as well as abroad, probably because of the relative ease with which the material can be understood. The book has now gone through several re printing cycles (among them a few pirate prints in Asian countries). I am grateful to all readers for their acceptance and for the many encouraging comments which have been received. I have thought very carefully about possible changes for the second edition. There is, of course, always room for improvement. Thus, some rewording, deletions, and additions have been made here and there. I withstood, how ever, the temptation to expand considerably the book by adding completely new subjects. Nevertheless, a few pages on recent developments needed to be inserted. Among them are, naturally, the discussion of ceramic (high-tempera ture) superconductors, and certain elements of the rapidly expanding field of optoelectronics. Further, I felt that the readers might be interested in learning some more practical applications which result from the physical concepts which have been treated here.
Author: Antoni Rogalski
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9781510611399
Category : Antimonides
Languages : en
Pages :
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Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Author:
Publisher: John Wiley & Sons
ISBN: 1789450136
Category : Science
Languages : en
Pages : 386
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Book Description
This book covers both the fundamental and applied aspects of advanced Na-ion batteries (NIB) which have proven to be a potential challenger to Li-ion batteries. Both the chemistry and design of positive and negative electrode materials are examined. In NIB, the electrolyte is also a crucial part of the batteries and the recent research, showing a possible alternative to classical electrolytes – with the development of ionic liquid-based electrolytes – is also explored. Cycling performance in NIB is also strongly associated with the quality of the electrode-electrolyte interface, where electrolyte degradation takes place; thus, Na-ion Batteries details the recent achievements in furthering knowledge of this interface. Finally, as the ultimate goal is commercialization of this new electrical storage technology, the last chapters are dedicated to the industrial point of view, given by two startup companies, who developed two different NIB chemistries for complementary applications and markets.
