Spin Transport in Ferromagnet-semiconductor Heterostructures PDF Download
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Author: Abdel Isakovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Book Description
Author: Abdel Isakovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Book Description
Author: William John Hodgson Leyland
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.
Author: Xiaohua Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Book Description
Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784384
Category : Science
Languages : en
Pages : 619
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author: Yunong Qi
Publisher:
ISBN:
Category : Nanostructures
Languages : en
Pages : 230
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Book Description
Recently, transport properties of magnetic nanostructures have been one of the most active research areas of Condensed Matter Physics. Many emerging scientific issues are not satisfactorily answered. This Thesis will be focused on one of the most important theoretical problems in magnetic nanostructures; namely, it aims at a better understanding of magnetotransport phenomena. Two most common scattering mechanisms, diffusive scattering in the bulk of the layers (or particles) and ballistic scattering at the interface (or boundaries) are believed to be the main sources of magnetoresistance (or resistance). Previously, one usually takes the bulk and interface scattering either ballistically or diffusively, but not both. In a realistic experimental structure, both scatterings exist and they are equally important. A unified theory of spin transport was established by using semiclassical Boltzmann equation approach in this Thesis. This work significantly generalizes previous scattering theories and can be broadly used to understand the magnetotransport properties of a variety of magnetic nanostructures. With this formalism, the interface and bulk scatterings can be successfully treated on equal footing. The conductance and magnetoresistance of a pinhole structure, then, can be calculated. It is found that both conductance and magnetoresistance can be optimized to desired values for magnetic recording application. To extend our model to semiconductor heterostructures, a more generalized, theoretical model has been developed in the study of non-zero magnetic and electric fields effects on spin transport properties. It is found that the spin-diffusion equation for non-equilibrium spin density and spin current density involves a number of new relevant length scales that explicitly depend on the electric and magnetic fields. The set of macroscopic equations can be used to address a very broad range of spin transport problems from magnetic, metallic multilayers to semiconductor heterostructures. The subject of spin transport we have completed is not only fundamentally interesting from the viewpoint of theoretical and material physics, but also greatly important for the development of emerging technology such as magnetic random access memory (MRAM) (which is a novel, non-volatile device and potential use for storing information in the computer), transistor, and possibly quantum computers.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784376
Category : Science
Languages : en
Pages : 497
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author: James Patrick McGuire
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
Author: Tomasz Blachowicz
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110490633
Category : Science
Languages : en
Pages : 302
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Book Description
Starting from quantum mechanical and condensed matter foundations, this book introduces into the necessary theory behind spin electronics (Spintronics). Equations of spin diffusion, -evolution and -tunelling are provided before an overview is given of simulation of spin transport at the atomic scale. Furthermore, applications are discussed with a focus on elementary spintronics devices such as spin valves, memory cells and hard disk heads.
