Spin Transport in Ferromagnet-semiconductor Heterostructures PDF Download
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Author: Abdel Isakovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Book Description
Author: Abdel Isakovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Author: Xiaohua Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
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Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784384
Category : Science
Languages : en
Pages : 619
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author:
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Category :
Languages : en
Pages :
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The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.
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Languages : en
Pages :
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Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 1439803773
Category : Science
Languages : en
Pages : 809
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Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grünberg’s Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, balanced account of the state of the art in the field known as spin electronics or spintronics. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materials systems, including silicon, organic semiconductors, carbon nanotubes, graphene, and carefully engineered nanostructures. The first section of the book offers a historical and personal perspective of the field written by Nobel Prize laureate Albert Fert. The second section addresses physical phenomena, such as GMR, in hybrid structures of ferromagnetic and normal metals. The third section discusses recent developments in spin-dependent tunneling, including magnetic tunnel junctions with ferroelectric barriers. In the fourth section, the contributors look at how to control spin and magnetism in semiconductors. In the fifth section, they examine phenomena typically found in nanostructures made from metals, superconductors, molecular magnets, carbon nanotubes, quantum dots, and graphene. The final section covers novel spin-based applications, including advanced magnetic sensors, nonvolatile magnetoresistive random access memory, and semiconductor spin-lasers. The techniques and materials of spintronics have rapidly evolved in recent years, leading to vast improvements in hard drive storage and magnetic sensing. With extensive cross-references between chapters, this seminal handbook provides a complete guide to spin transport and magnetism across various classes of materials and structures.
Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: Yunong Qi
Publisher:
ISBN:
Category : Nanostructures
Languages : en
Pages : 230
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Book Description
Recently, transport properties of magnetic nanostructures have been one of the most active research areas of Condensed Matter Physics. Many emerging scientific issues are not satisfactorily answered. This Thesis will be focused on one of the most important theoretical problems in magnetic nanostructures; namely, it aims at a better understanding of magnetotransport phenomena. Two most common scattering mechanisms, diffusive scattering in the bulk of the layers (or particles) and ballistic scattering at the interface (or boundaries) are believed to be the main sources of magnetoresistance (or resistance). Previously, one usually takes the bulk and interface scattering either ballistically or diffusively, but not both. In a realistic experimental structure, both scatterings exist and they are equally important. A unified theory of spin transport was established by using semiclassical Boltzmann equation approach in this Thesis. This work significantly generalizes previous scattering theories and can be broadly used to understand the magnetotransport properties of a variety of magnetic nanostructures. With this formalism, the interface and bulk scatterings can be successfully treated on equal footing. The conductance and magnetoresistance of a pinhole structure, then, can be calculated. It is found that both conductance and magnetoresistance can be optimized to desired values for magnetic recording application. To extend our model to semiconductor heterostructures, a more generalized, theoretical model has been developed in the study of non-zero magnetic and electric fields effects on spin transport properties. It is found that the spin-diffusion equation for non-equilibrium spin density and spin current density involves a number of new relevant length scales that explicitly depend on the electric and magnetic fields. The set of macroscopic equations can be used to address a very broad range of spin transport problems from magnetic, metallic multilayers to semiconductor heterostructures. The subject of spin transport we have completed is not only fundamentally interesting from the viewpoint of theoretical and material physics, but also greatly important for the development of emerging technology such as magnetic random access memory (MRAM) (which is a novel, non-volatile device and potential use for storing information in the computer), transistor, and possibly quantum computers.
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784376
Category : Science
Languages : en
Pages : 497
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author: Jack T. Brangham
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages :
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Book Description
Spintronics research over the past two decades has focused on developing an understanding of spin transport in materials currently used in the semiconductor industry for potential spin-based applications. Recently, a surge of interest in spin transport in antiferromagnetic materials and spin interactions in novel materials have led to many promising discoveries. The work in this dissertation explores discrepancies in past discoveries, provides evidence to support recent theories on antiferromagnetic (AFM) spin transport, and develops the capabilities to further explore spin physics in novel states of matter. This dissertation focuses on four primary topics. First, a thickness dependence of the spin Hall angle in Au is discussed as a potential explanation for a large variance in the previously reported values. Second, evidence supporting a highly efficient mode of spin transport mediated by AFM fluctuations is found in the temperature dependence of the spin pumping signal in Pt/NiO/Y3Fe5O12 trilayers. Third, a new low damping metallic ferromagnet is developed and characterized as a potential platform for future spintronic research. Finally, a molecular beam epitaxy system is established with the capabilities to prepare topologically insulating materials that are predicted to host many novel phenomena.
