Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes PDF Download
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Author: Stefan Ferdinand Müller
Publisher: BoD – Books on Demand
ISBN: 3739248947
Category : Technology & Engineering
Languages : en
Pages : 137
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Book Description
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
Author: Stefan Ferdinand Müller
Publisher: BoD – Books on Demand
ISBN: 3739248947
Category : Technology & Engineering
Languages : en
Pages : 137
Get Book Here
Book Description
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Author: Wiley Kirk
Publisher: Academic Press
ISBN: 0323145833
Category : Science
Languages : en
Pages : 566
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Book Description
Nanostructures and Mesoscopic Systems presents the proceedings of the International Symposium held in Santa Fe, New Mexico on May 20-24, 1991. The book discusses nanostructure physics; nanostructures in motion; and advances in nanostructure fabrication. The text also describes ballistic transport and coherence; low-dimensional tunneling; and electron correlation and coulomb blockade. Banostructure arrays and collective effects; the theory and modeling of nanostructures; and mesoscopic systems are also encompassed. The book further tackles the optical properties of nanostructures.
Author:
Publisher:
ISBN:
Category : Paperbacks
Languages : en
Pages : 1240
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Book Description
Author: Frede Blaabjerg
Publisher: MDPI
ISBN: 3038979740
Category : Technology & Engineering
Languages : en
Pages : 476
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Book Description
Power electronics technology is still an emerging technology, and it has found its way into many applications, from renewable energy generation (i.e., wind power and solar power) to electrical vehicles (EVs), biomedical devices, and small appliances, such as laptop chargers. In the near future, electrical energy will be provided and handled by power electronics and consumed through power electronics; this not only will intensify the role of power electronics technology in power conversion processes, but also implies that power systems are undergoing a paradigm shift, from centralized distribution to distributed generation. Today, more than 1000 GW of renewable energy generation sources (photovoltaic (PV) and wind) have been installed, all of which are handled by power electronics technology. The main aim of this book is to highlight and address recent breakthroughs in the range of emerging applications in power electronics and in harmonic and electromagnetic interference (EMI) issues at device and system levels as discussed in robust and reliable power electronics technologies, including fault prognosis and diagnosis technique stability of grid-connected converters and smart control of power electronics in devices, microgrids, and at system levels.
Author:
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 2460
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Book Description
Author: Helmuth Spieler
Publisher: OUP Oxford
ISBN: 0191523658
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Author: A.J. Kallio
Publisher: Springer
ISBN: 9781461282723
Category : Science
Languages : en
Pages : 404
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Book Description
The present volume contains the texts of the invited talks delivered at the Fifth International Conference on Recent Progress in Many-Body Theories held in Oulu, Finland during the period 3-8 August 1987. The general format and style of the meeting followed closely those which had evolved from the earlier conferences in the series: Trieste 1978, Oaxtepec 1981, Altenberg 1983 and San Francisco 1985. Thus, the conferences in this series are in tended, as far as is practicable, to cover in a broad and balanced fashion both the entire spectrum of theoretical tools developed to tackle the quan tum many-body problem, and their major fields of· application. One of the major aims of the series is to foster the exchange of ideas and techniques among physicists working in such diverse areas of application of many-body theories as nucleon-nucleon interactions, nuclear physics, astronomy, atomic and molecular physics, quantum chemistry, quantum fluids and plasmas, and solid-state and condensed matter physics. A special feature of the present meeting however was that particular attention was paid in the programme to such topics of current interest in solid-state physics as high-temperature superconductors, heavy fermions, the quantum Hall effect, and disorder. A panel discussion was also organised during the conference, under the chair manship of N. W. Ashcroft, to consider the latest developments in the extreme ly rapidly growing field of high-T superconductors.
Author: Barry Taylor
Publisher: DIANE Publishing
ISBN: 0788125796
Category : Metric system
Languages : en
Pages : 84
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Book Description
A basic introduction to the metric system. Covers: the three classes of SI units & the SI prefixes; units outside the SI; rules & style conventions for printing & using units; rules & style conventions for expressing values of quantities; comments on some quantities & their units; rules & style conventions for spelling unit names; printing & using symbols & numbers in scientific & technical documents; & check list for reviewing manuscripts. Appendix: definitions of SI base units & the radian & Steradian; conversion factors, & comments on the references of the SI for the U.S. Extensive bibliography.
Author: Paul Leroux
Publisher: MDPI
ISBN: 3039212796
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.
