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Author: Zahid Ali Khan Durrani
Publisher: World Scientific
ISBN: 1848164130
Category : Science
Languages : en
Pages : 300
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Book Description
This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
Author: Zahid Ali Khan Durrani
Publisher: World Scientific
ISBN: 1848164130
Category : Science
Languages : en
Pages : 300
Get Book Here
Book Description
This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
Author: Hermann Grabert
Publisher: Springer Science & Business Media
ISBN: 1475721668
Category : Science
Languages : en
Pages : 344
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Book Description
The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study Institute is the Special Issue on Single Charge Tunneling of Zeitschrift für Physik B, Vol. 85, pp. 317-468 (1991 ). That issue with original papers provides a snapshot af the leading edge of current research in the field. The success of the meeting and the publicatian of this volume was made possible through the generaus support af the NATO Scientific A:ffairs Division, Brussels, Belgium. The Centre de Physique des Hauches has provided a superbly situated conference site and took care af many lacal arrangements. Both far the preparation of the conference and the handling af some manuscripts the suppart af the Centre d 'Etudes de Saclay was essential. The editing of the proceedings volume would not have been passible without the dedicated efforts of Dr. G. -1. Ingald, who tailared a 1\.
Author: Vijay Kumar
Publisher: Elsevier
ISBN: 0080549519
Category : Technology & Engineering
Languages : en
Pages : 385
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Book Description
Properties of nanosilicon in the form of nanoparticles, nanowires, nanotubes, and as porous material are of great interest. They can be used in finding suitable components for future miniature devices, and for the more exciting possibilities of novel optoelectronic applications due to bright luminescence from porous silicon, nanoparticles and nanowires. New findings from research into metal encapsulated clusters, silicon fullerenes and nanotubes have opened up a new paradigm in nanosilicon research and this could lead to large scale production of nanoparticles with control on size and shape as well as novel quasi one-dimensional structures. There are possibilities of using silicon as an optical material and in the development of a silicon laser. In Nanosilicon, leading experts cover state-of-the-art experimental and theoretical advances in the different forms of nanosilicon. Furthermore, applications of nanosilicon to single electron transistors, as photonic material, chemical and biological sensors at molecular scale, and silicon nanowire devices are also discussed. Self-assemblies of silicon nanoforms are important for applications. These developments are also related to cage structures of silicon in clathrates. With an interesting focus on the bottlenecks in the advancement of silicon based technology, this book provides a much-needed overview of the current state of understanding of nanosilicon research. - Latest developments in nanoparticles, nanowires and nanotubes of silicon - Focus on nanosilicon - a very timely subject attracting large interest - Novel chapters on metal encapsulated silicon clusters and nanotubes
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 300
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Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Author: Santanu Mahapatra
Publisher: Artech House Publishers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 252
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Book Description
CD-ROM contains SET analytical model MIB coded in C++, MATLAB, and Verilog-A language, allowing user to cosimulate and codesign hybrid CMOS-SET circuits. Numerous circuit examples are also provided.
Author: S. Hall
Publisher: Springer Science & Business Media
ISBN: 1402063784
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: Mitra Dutta
Publisher: World Scientific
ISBN: 981449545X
Category : Technology & Engineering
Languages : en
Pages : 323
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Book Description
This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.
Author: Karl Goser
Publisher: Springer Science & Business Media
ISBN: 3662054213
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
An accessible introduction for electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.
Author: B.L. Altshuler
Publisher: Elsevier
ISBN: 0444600418
Category : Science
Languages : en
Pages : 577
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Book Description
The physics of disordered systems has enjoyed a resurgence of interest in the last decade. New concepts such as weak localization, interaction effects and Coulomb gap, have been developed for the transport properties of metals and insulators. With the fabrication of smaller and smaller samples and the routine availability of low temperatures, new physics has emerged from the studies of small devices. The new field goes under the name "mesoscopic physics" and has rapidly developed, both experimentally and theoretically. This book is designed to review the current status of the field.Most of the chapters in the book are devoted to the development of new ideas in the field. They include reviews of experimental observations of conductance fluctuations and the Aharonov-Bohm oscillations in disordered metals, theoretical and experimental work on low frequency noise in small disordered systems, transmittancy fluctuations through random barriers, and theoretical work on the distribution of fluctuation quantities such as conductance. Two chapters are not connected directly to the mesoscopic fluctuations but deal with small systems. They cover the effects of Coulomb interaction in the tunneling through the small junctions, and experimental results on ballistic transport through a perfect conductor.
Author: Francis Balestra
Publisher: Springer Science & Business Media
ISBN: 9780792373773
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
