Simulation of Si CMES Using Synopsys Sentaurus Technology Computer Aided Design Tools PDF Download
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Author: Malav Shah
Publisher:
ISBN:
Category : Computer-aided engineering
Languages : en
Pages : 108
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Book Description
This paper is concentrated on the development of a complete complementary silicon MESFET technology.
Author: Malav Shah
Publisher:
ISBN:
Category : Computer-aided engineering
Languages : en
Pages : 108
Get Book Here
Book Description
This paper is concentrated on the development of a complete complementary silicon MESFET technology.
Author: Chih Yuan Cheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 266
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Book Description
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Author: Resve A. Saleh
Publisher: Springer Science & Business Media
ISBN: 1461306957
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
Our purpose in writing this book was two-fold. First, we wanted to compile a chronology of the research in the field of mixed-mode simulation over the last ten to fifteen years. A substantial amount of work was done during this period of time but most of it was published in archival form in Masters theses and Ph. D. dissertations. Since the interest in mixed-mode simulation is growing, and a thorough review of the state-of-the-art in the area was not readily available, we thought it appropriate to publish the information in the form of a book. Secondly, we wanted to provide enough information to the reader so that a proto type mixed-mode simulator could be developed using the algorithms in this book. The SPLICE family of programs is based on the algorithms and techniques described in this book and so it can also serve as docu mentation for these programs. ACKNOWLEDGEMENTS The authors would like to dedicate this book to Prof. D. O. Peder son for inspiring this research work and for providing many years of support and encouragement The authors enjoyed many fruitful discus sions and collaborations with Jim Kleckner, Young Kim, Alberto Sangiovanni-Vincentelli, and Jacob White, and we thank them for their contributions. We also thank the countless others who participated in the research work and read early versions of this book. Lillian Beck provided many useful suggestions to improve the manuscript. Yun cheng Ju did the artwork for the illustrations.
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Yung-Chun Wu
Publisher: Springer
ISBN: 9811030669
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Author: Suresh Chandra Satapathy
Publisher: Springer
ISBN: 9811042802
Category : Technology & Engineering
Languages : en
Pages : 674
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Book Description
The book is a collection of best papers presented in the Second International Conference on Microelectronics Electromagnetics and Telecommunication (ICMEET 2016), an international colloquium, which aims to bring together academic scientists, researchers and research scholars to discuss the recent developments and future trends in the fields of microelectronics, electromagnetics and telecommunication. Microelectronics research investigates semiconductor materials and device physics for developing electronic devices and integrated circuits with data/energy efficient performance in terms of speed, power consumption, and functionality. The book discusses various topics like analog, digital and mixed signal circuits, bio-medical circuits and systems, RF circuit design, microwave and millimeter wave circuits, green circuits and systems, analog and digital signal processing, nano electronics and giga scale systems, VLSI circuits and systems, SoC and NoC, MEMS and NEMS, VLSI digital signal processing, wireless communications, cognitive radio, and data communication.
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: R. K. Sharma
Publisher: Springer
ISBN: 3319976044
Category : Technology & Engineering
Languages : en
Pages : 1260
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Book Description
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Author: Riko Radojcic
Publisher: Springer
ISBN: 3319525484
Category : Technology & Engineering
Languages : en
Pages : 192
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Book Description
This book presents a realistic and a holistic review of the microelectronic and semiconductor technology options in the post Moore’s Law regime. Technical tradeoffs, from architecture down to manufacturing processes, associated with the 2.5D and 3D integration technologies, as well as the business and product management considerations encountered when faced by disruptive technology options, are presented. Coverage includes a discussion of Integrated Device Manufacturer (IDM) vs Fabless, vs Foundry, and Outsourced Assembly and Test (OSAT) barriers to implementation of disruptive technology options. This book is a must-read for any IC product team that is considering getting off the Moore’s Law track, and leveraging some of the More-than-Moore technology options for their next microelectronic product.
