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Author: Gerhard Wachutka
Publisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
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Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author: Gerhard Wachutka
Publisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
Get Book Here
Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 368
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Book Description
Author: Crina Grosan
Publisher: Springer
ISBN: 3540732977
Category : Computers
Languages : en
Pages : 410
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Book Description
This edited volume is targeted at presenting the latest state-of-the-art methodologies in "Hybrid Evolutionary Algorithms". The chapters deal with the theoretical and methodological aspects, as well as various applications to many real world problems from science, technology, business or commerce. Overall, the book has 14 chapters including an introductory chapter giving the fundamental definitions and some important research challenges. The contributions were selected on the basis of fundamental ideas/concepts rather than the thoroughness of techniques deployed.
Author: Lado Filipovic
Publisher: MDPI
ISBN: 3039210106
Category : Technology & Engineering
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525
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Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author: Amit Chaudhry
Publisher: Springer Science & Business Media
ISBN: 1461468221
Category : Technology & Engineering
Languages : en
Pages : 211
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Book Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Author: Rasit Onur Topaloglu
Publisher: Bentham Science Publishers
ISBN: 1608050742
Category : Technology & Engineering
Languages : en
Pages : 200
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Book Description
"The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transisto"
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 0429533624
Category : Technology & Engineering
Languages : en
Pages : 302
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Book Description
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Karama Kanoun
Publisher: John Wiley & Sons
ISBN: 0470370831
Category : Computers
Languages : en
Pages : 384
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Book Description
A comprehensive collection of benchmarks for measuring dependability in hardware-software systems As computer systems have become more complex and mission-critical, it is imperative for systems engineers and researchers to have metrics for a system's dependability, reliability, availability, and serviceability. Dependability benchmarks are useful for guiding development efforts for system providers, acquisition choices of system purchasers, and evaluations of new concepts by researchers in academia and industry. This book gathers together all dependability benchmarks developed to date by industry and academia and explains the various principles and concepts of dependability benchmarking. It collects the expert knowledge of DBench, a research project funded by the European Union, and the IFIP Special Interest Group on Dependability Benchmarking, to shed light on this important area. It also provides a large panorama of examples and recommendations for defining dependability benchmarks. Dependability Benchmarking for Computer Systems includes contributions from a credible mix of industrial and academic sources: IBM, Intel, Microsoft, Sun Microsystems, Critical Software, Carnegie Mellon University, LAAS-CNRS, Technical University of Valencia, University of Coimbra, and University of Illinois. It is an invaluable resource for engineers, researchers, system vendors, system purchasers, computer industry consultants, and system integrators.
