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Author: Robert E. O'Malley
Publisher: SIAM
ISBN: 9780898713022
Category : Mathematics
Languages : en
Pages : 424
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Book Description
Proceedings -- Computer Arithmetic, Algebra, OOP.
Author: Robert E. O'Malley
Publisher: SIAM
ISBN: 9780898713022
Category : Mathematics
Languages : en
Pages : 424
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Book Description
Proceedings -- Computer Arithmetic, Algebra, OOP.
Author: Karl Hess
Publisher: Springer Science & Business Media
ISBN: 1461540267
Category : Technology & Engineering
Languages : en
Pages : 317
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Book Description
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Author: Siegfried Selberherr
Publisher: Springer
ISBN: 9780387825045
Category : Science
Languages : en
Pages : 532
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Book Description
Author: Zhangxin Chen
Publisher: Springer Science & Business Media
ISBN: 3540280782
Category : Science
Languages : en
Pages : 415
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Book Description
Introduce every concept in the simplest setting and to maintain a level of treatment that is as rigorous as possible without being unnecessarily abstract. Contains unique recent developments of various finite elements such as nonconforming, mixed, discontinuous, characteristic, and adaptive finite elements, along with their applications. Describes unique recent applications of finite element methods to important fields such as multiphase flows in porous media and semiconductor modelling. Treats the three major types of partial differential equations, i.e., elliptic, parabolic, and hyperbolic equations.
Author: Joseph W. Jerome
Publisher: Springer Science & Business Media
ISBN: 3642799876
Category : Mathematics
Languages : en
Pages : 177
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Book Description
This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 3709162440
Category : Technology & Engineering
Languages : en
Pages : 463
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Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 612
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Book Description
Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
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Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 168
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Book Description
