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Author: Vi︠a︡cheslav Ivanovich Belyĭ
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 280
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Book Description
This book is an English version, expanded and brought up to date, of the Russian book published in 1982. It has been written by a group of authors - chemists and physicists - and is designed particularly for specialists who are developing semiconductor devices. Silicon nitride has long been familiar as a material used in the process of manufacturing fire-proof products. During the past decade, it has come into use as a thin dielectric film in electronics, and at present silicon nitride synthesis underlies the basic technology for integrated circuits. The monograph discusses the characteristics that determine the process of synthesis of silicon nitride films, their structure, chemical composition, optical and electrophysical properties, as well as various applications of silicon nitride in electronics.
Author:
Publisher:
ISBN: 9780444416858
Category : Microelectronics
Languages : en
Pages : 0
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Book Description
Author: Vi︠a︡cheslav Ivanovich Belyĭ
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 280
Get Book Here
Book Description
This book is an English version, expanded and brought up to date, of the Russian book published in 1982. It has been written by a group of authors - chemists and physicists - and is designed particularly for specialists who are developing semiconductor devices. Silicon nitride has long been familiar as a material used in the process of manufacturing fire-proof products. During the past decade, it has come into use as a thin dielectric film in electronics, and at present silicon nitride synthesis underlies the basic technology for integrated circuits. The monograph discusses the characteristics that determine the process of synthesis of silicon nitride films, their structure, chemical composition, optical and electrophysical properties, as well as various applications of silicon nitride in electronics.
Author: J. T. Milek
Publisher: Springer Science & Business Media
ISBN: 1461596092
Category : Technology & Engineering
Languages : en
Pages : 124
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Book Description
This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .
Author: Vladimir Ivanovič Belyj
Publisher:
ISBN: 9780444416858
Category :
Languages : en
Pages : 263
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Book Description
Author: John T. Milek
Publisher: Springer Science & Business Media
ISBN: 1468461621
Category : Technology & Engineering
Languages : en
Pages : 126
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Book Description
The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Author: F.H.P.M. Habraken
Publisher: Springer
ISBN: 9783642765933
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.
Author: F. H. P. M. Habraken
Publisher: Lecture Notes in Computer Scie
ISBN: 9780387539546
Category : Science
Languages : en
Pages : 159
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Book Description
The present book collects a broad overview of chemical and physical char- acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex- tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato- ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro- electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide- like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men- tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.
Author: Vikram J. Kapoor
Publisher:
ISBN:
Category : Electric and insulation
Languages : en
Pages : 570
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Book Description
Author: Eberhard F. Krimmel
Publisher:
ISBN: 9783662099032
Category : Chemistry, Physical and theoretical
Languages : en
Pages : 401
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Book Description
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Author: John T. Milek
Publisher:
ISBN:
Category :
Languages : en
Pages : 118
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Book Description
