Author: S. Pantellides
Publisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Silicon-Germanium Carbon Alloys
Author: S. Pantellides
Publisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Publisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Silicon-germanium-carbon Alloys by Ultra High Vacuum Chemical Vapor Deposition
Author: Anda C. Mocuta
Publisher:
ISBN:
Category : Carnegie Mellon University
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Carnegie Mellon University
Languages : en
Pages : 0
Book Description
Characterization and Oxidation of Silicon-germanium-carbon Alloys Grown by Chemical Vapor Deposition
Author: Andrew Emil Bair
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 262
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 262
Book Description
Silicon, Germanium, and Their Alloys
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586656
Category : Science
Languages : en
Pages : 424
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Publisher: CRC Press
ISBN: 1466586656
Category : Science
Languages : en
Pages : 424
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Strain and Thermal Stability Analysis of Silicon-germanium and Silicon-germanium-carbon Alloys on SI(001)
Author: Sean Sego
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 254
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 254
Book Description
Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas
Author: James R. Dekker
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
Book Description
Silicon-Germanium-Carbon Alloys for Optoelectronic Devices (FY91 AASERT).
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
This research resulted the growth on the growth of this new semiconductor alloys, silicon-germanium carbon, by the technique of molecular beam epitaxy (MBE). The alloys have been characterized by several techniques including Rutherford backscattering spectronietry (RBS) for composition, and Fourier transform infrared spectrometry (FTIR) for optical absorption. The Si%%%%%Ge%C% alloys were successfully grown using all solid sources for the Si, Ge and C. Substrates were 75 mm diameter (100) - oriented Si wafers, and alloy layer thicknesses ranged from 10 nm to 3 %m.
Publisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
This research resulted the growth on the growth of this new semiconductor alloys, silicon-germanium carbon, by the technique of molecular beam epitaxy (MBE). The alloys have been characterized by several techniques including Rutherford backscattering spectronietry (RBS) for composition, and Fourier transform infrared spectrometry (FTIR) for optical absorption. The Si%%%%%Ge%C% alloys were successfully grown using all solid sources for the Si, Ge and C. Substrates were 75 mm diameter (100) - oriented Si wafers, and alloy layer thicknesses ranged from 10 nm to 3 %m.
Raman Spectroscopy of Silicon-germanium-carbon Alloys
Author: Pashupathy S. Gopalan
Publisher:
ISBN:
Category : Raman spectroscopy
Languages : en
Pages : 110
Book Description
Publisher:
ISBN:
Category : Raman spectroscopy
Languages : en
Pages : 110
Book Description
Properties of Silicon Germanium and SiGe:Carbon
Author: Erich Kasper
Publisher: Inst of Engineering & Technology
ISBN: 9780852967836
Category : Technology & Engineering
Languages : en
Pages : 358
Book Description
The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Publisher: Inst of Engineering & Technology
ISBN: 9780852967836
Category : Technology & Engineering
Languages : en
Pages : 358
Book Description
The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Properties of Silicon Germanium and SiGe
Author: Erich Kasper
Publisher: Inst of Engineering & Technology
ISBN: 9780863415579
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.
Publisher: Inst of Engineering & Technology
ISBN: 9780863415579
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.