Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 0387690107
Category : Technology & Engineering
Languages : en
Pages : 614
Book Description
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Silicon Devices and Process Integration
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 0387690107
Category : Technology & Engineering
Languages : en
Pages : 614
Book Description
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Publisher: Springer Science & Business Media
ISBN: 0387690107
Category : Technology & Engineering
Languages : en
Pages : 614
Book Description
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Silicon Analog Components
Author: Badih El-Kareh
Publisher: Springer
ISBN: 1493927515
Category : Technology & Engineering
Languages : en
Pages : 634
Book Description
This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Publisher: Springer
ISBN: 1493927515
Category : Technology & Engineering
Languages : en
Pages : 634
Book Description
This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Handbook of Silicon Based MEMS Materials and Technologies
Author: Markku Tilli
Publisher: Elsevier
ISBN: 0815519885
Category : Technology & Engineering
Languages : en
Pages : 670
Book Description
A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
Publisher: Elsevier
ISBN: 0815519885
Category : Technology & Engineering
Languages : en
Pages : 670
Book Description
A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
ULSI Process Integration III
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773768
Category : Technology & Engineering
Languages : en
Pages : 620
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773768
Category : Technology & Engineering
Languages : en
Pages : 620
Book Description
Semiconductor Silicon Crystal Technology
Author: Fumio Shimura
Publisher: Elsevier
ISBN: 0323150489
Category : Technology & Engineering
Languages : en
Pages : 435
Book Description
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Publisher: Elsevier
ISBN: 0323150489
Category : Technology & Engineering
Languages : en
Pages : 435
Book Description
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Nanoscale Silicon Devices
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
3D IC Devices, Technologies, and Manufacturing
Author: Hong Xiao
Publisher: Spie Society of Photo-Optical Instrumentation Engineers (Spie
ISBN: 9781510601468
Category : Three-dimensional integrated circuits
Languages : en
Pages : 220
Book Description
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging.
Publisher: Spie Society of Photo-Optical Instrumentation Engineers (Spie
ISBN: 9781510601468
Category : Three-dimensional integrated circuits
Languages : en
Pages : 220
Book Description
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging.
Advances in Silicon Carbide Processing and Applications
Author: Stephen E. Saddow
Publisher: Artech House
ISBN: 9781580537414
Category : Science
Languages : en
Pages : 236
Book Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Publisher: Artech House
ISBN: 9781580537414
Category : Science
Languages : en
Pages : 236
Book Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Advances in CMP Polishing Technologies
Author: Toshiro Doi
Publisher: William Andrew
ISBN: 1437778593
Category : Science
Languages : en
Pages : 330
Book Description
CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan
Publisher: William Andrew
ISBN: 1437778593
Category : Science
Languages : en
Pages : 330
Book Description
CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan
Polycrystalline Silicon for Integrated Circuit Applications
Author: Ted Kamins
Publisher: Springer Science & Business Media
ISBN: 1461316812
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Publisher: Springer Science & Business Media
ISBN: 1461316812
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.