Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable-capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage-controlled Function PDF Download
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Author: Sitarama Raju Gottumukkala
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41
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Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Author: Sitarama Raju Gottumukkala
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41
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Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Author: Kiran Kumar Rambappagari
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 48
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Book Description
In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Author: Ho-Young Cha
Publisher:
ISBN:
Category :
Languages : en
Pages : 360
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Book Description
Author: Siddharth Nirmal
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
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Book Description
Author: Raymond S. Pengelly
Publisher: IET
ISBN: 1884932509
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Author: Bhavik Patel
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Ali M. Niknejad
Publisher: Springer Science & Business Media
ISBN: 0306470381
Category : Technology & Engineering
Languages : en
Pages : 193
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Book Description
The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
Author: Paul Richman
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 280
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Book Description
Author: Walter Daves
Publisher:
ISBN: 9783844016819
Category :
Languages : en
Pages : 170
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Book Description
Author: Ira Ardoin
Publisher:
ISBN:
Category :
Languages : en
Pages : 118
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Book Description
The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.
