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Author: Peter M. Gammon
Publisher: Trans Tech Publications Ltd
ISBN: 3035733325
Category : Technology & Engineering
Languages : en
Pages : 883
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Book Description
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Author: Peter M. Gammon
Publisher: Trans Tech Publications Ltd
ISBN: 3035733325
Category : Technology & Engineering
Languages : en
Pages : 883
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Book Description
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Author: Hiroshi Yano
Publisher: Trans Tech Publications Ltd
ISBN: 3035735794
Category : Science
Languages : en
Pages : 1169
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Book Description
Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Peter M. Gammon
Publisher:
ISBN: 9781523127658
Category : Silicon carbide
Languages : en
Pages : 883
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Book Description
Author:
Publisher: Elsevier
ISBN: 0081028660
Category : Science
Languages : en
Pages : 4871
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Book Description
Materials in a nuclear environment are exposed to extreme conditions of radiation, temperature and/or corrosion, and in many cases the combination of these makes the material behavior very different from conventional materials. This is evident for the four major technological challenges the nuclear technology domain is facing currently: (i) long-term operation of existing Generation II nuclear power plants, (ii) the design of the next generation reactors (Generation IV), (iii) the construction of the ITER fusion reactor in Cadarache (France), (iv) and the intermediate and final disposal of nuclear waste. In order to address these challenges, engineers and designers need to know the properties of a wide variety of materials under these conditions and to understand the underlying processes affecting changes in their behavior, in order to assess their performance and to determine the limits of operation. Comprehensive Nuclear Materials, Second Edition, Seven Volume Set provides broad ranging, validated summaries of all the major topics in the field of nuclear material research for fission as well as fusion reactor systems. Attention is given to the fundamental scientific aspects of nuclear materials: fuel and structural materials for fission reactors, waste materials, and materials for fusion reactors. The articles are written at a level that allows undergraduate students to understand the material, while providing active researchers with a ready reference resource of information. Most of the chapters from the first Edition have been revised and updated and a significant number of new topics are covered in completely new material. During the ten years between the two editions, the challenge for applications of nuclear materials has been significantly impacted by world events, public awareness, and technological innovation. Materials play a key role as enablers of new technologies, and we trust that this new edition of Comprehensive Nuclear Materials has captured the key recent developments. Critically reviews the major classes and functions of materials, supporting the selection, assessment, validation and engineering of materials in extreme nuclear environments Comprehensive resource for up-to-date and authoritative information which is not always available elsewhere, even in journals Provides an in-depth treatment of materials modeling and simulation, with a specific focus on nuclear issues Serves as an excellent entry point for students and researchers new to the field
Author: N.M. Ravindra
Publisher: Morgan & Claypool Publishers
ISBN: 1681741768
Category : Science
Languages : en
Pages : 160
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Book Description
Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.
Author: Masanobu Yoshikawa
Publisher: Springer Nature
ISBN: 3031197224
Category : Technology & Engineering
Languages : en
Pages : 227
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Book Description
This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.
Author: Stephen E. Saddow
Publisher: Artech House
ISBN: 9781580537414
Category : Science
Languages : en
Pages : 236
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Book Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author: Ōsaka Daigaku. Sangyō Kagaku Kenkyūjo
Publisher:
ISBN:
Category : Research, Industrial
Languages : en
Pages : 236
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Book Description
