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Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
Get Book Here
Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 1160
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Book Description
Author: Mahmud M. Rahman
Publisher: Springer
ISBN: 9783540516569
Category : Science
Languages : en
Pages : 232
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Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Shin-ichi Nakashima
Publisher: CRC Press
ISBN:
Category : Design
Languages : en
Pages : 1158
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Book Description
The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Damian Mazur
Publisher: Springer
ISBN: 3319639498
Category : Technology & Engineering
Languages : en
Pages : 444
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Book Description
This book addresses selected topics in electrical engineering, electronics and mechatronics that have posed serious challenges for both the scientific and engineering communities in recent years. The topics covered range from mathematical models of electrical and electronic components and systems, to simulation tools implemented for their analysis and further developments; and from multidisciplinary optimization, signal processing methods and numerical results, to control and diagnostic techniques. By bridging theory and practice in the modeling, design and optimization of electrical, electromechanical and electronic systems, and by adopting a multidisciplinary perspective, the book provides researchers and practitioners with timely and extensive information on the state of the art in the field — and a source of new, exciting ideas for further developments and collaborations. The book presents selected results of the XIII Scientific Conference on Selected Issues of Electrical Engineering and Electronics (WZEE 2016), held on May 04–08, 2016, in Rzeszów, Poland. The Conference was organized by the Rzeszów Division of Polish Association of Theoretical and Applied Electrical Engineering (PTETiS) in cooperation with the Faculty of Electrical and Computer Engineering of the Rzeszów University of Technology.
Author: Satoru Kaneko
Publisher: Springer Nature
ISBN: 9811576106
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
This book commemorates the “Nobel Laureate Professor Suzuki Special Symposium” at the International Union of Material Research Society–International Conference on Advanced Materials (IUMRS-ICAM2017), which was held at Kyoto University, Japan, in 2017. The book begins with a foreword by Professor Akira Suzuki. Subsequently, many authors who attended the special symposium describe the latest scientific advances in the field of carbon materials and carbon nanomaterials including polymers, carbon nanocomposites, and graphene. Carbon-based materials have recently been the focus of considerable attention, given their wide range of potential applications. Fittingly, the chapters in this book cover both experimental and theoretical approaches in several categories of carbon-related materials.
Author: International Conference on Materials Engineering and Environmental Science
Publisher: World Scientific
ISBN: 9814759988
Category : Electronic books
Languages : en
Pages : 904
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Book Description
"This book consists of one hundred and nine selected papers presented at the 2015 International Conference on Materials Engineering and Environmental Science (MEES2015), which was successfully held in Wuhan, China during September 25-27, 2015. All papers selected for this proceedings were subjected to a rigorous peer-review process by at least two independent peers. The papers were selected based on innovation, organization, and quality of presentation. The MEES2015 covered a wide spectrum of research topics, ranging from fundamental studies, technical innovations, to industrial applications in Chemical Material and Chemical Processing Technology, Composite Materials, Alloy Materials and Metal Materials, Characteristics of Materials, Building Material and Construction Technology, Ecology and Environment, Technology for Environmental Protection, Economy and Environment, Mechanical and Control Engineering, and Manufacturing Technology. The MEES2015 brought together more than one hundred researchers from China, South Korea, Taiwan, Japan, Malaysia, and Saudi Arabia, and provided them with a forum to share, exchange and discuss new scientific development and future directions of Materials Engineering and Environmental Science."--Provided by publisher
Author: Peter Wellmann
Publisher: John Wiley & Sons
ISBN: 3527346716
Category : Technology & Engineering
Languages : en
Pages : 743
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Book Description
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author:
Publisher: Elsevier
ISBN: 0081028660
Category : Science
Languages : en
Pages : 4871
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Book Description
Materials in a nuclear environment are exposed to extreme conditions of radiation, temperature and/or corrosion, and in many cases the combination of these makes the material behavior very different from conventional materials. This is evident for the four major technological challenges the nuclear technology domain is facing currently: (i) long-term operation of existing Generation II nuclear power plants, (ii) the design of the next generation reactors (Generation IV), (iii) the construction of the ITER fusion reactor in Cadarache (France), (iv) and the intermediate and final disposal of nuclear waste. In order to address these challenges, engineers and designers need to know the properties of a wide variety of materials under these conditions and to understand the underlying processes affecting changes in their behavior, in order to assess their performance and to determine the limits of operation. Comprehensive Nuclear Materials, Second Edition, Seven Volume Set provides broad ranging, validated summaries of all the major topics in the field of nuclear material research for fission as well as fusion reactor systems. Attention is given to the fundamental scientific aspects of nuclear materials: fuel and structural materials for fission reactors, waste materials, and materials for fusion reactors. The articles are written at a level that allows undergraduate students to understand the material, while providing active researchers with a ready reference resource of information. Most of the chapters from the first Edition have been revised and updated and a significant number of new topics are covered in completely new material. During the ten years between the two editions, the challenge for applications of nuclear materials has been significantly impacted by world events, public awareness, and technological innovation. Materials play a key role as enablers of new technologies, and we trust that this new edition of Comprehensive Nuclear Materials has captured the key recent developments. Critically reviews the major classes and functions of materials, supporting the selection, assessment, validation and engineering of materials in extreme nuclear environments Comprehensive resource for up-to-date and authoritative information which is not always available elsewhere, even in journals Provides an in-depth treatment of materials modeling and simulation, with a specific focus on nuclear issues Serves as an excellent entry point for students and researchers new to the field
