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Author: Hajime Okumura
Publisher:
ISBN:
Category :
Languages : en
Pages : 587
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Book Description
Author: Hajime Okumura
Publisher:
ISBN:
Category :
Languages : en
Pages : 587
Get Book Here
Book Description
Author: Hajime Okumura
Publisher: Trans Tech Publications Ltd
ISBN: 3038263915
Category : Technology & Engineering
Languages : en
Pages : 1246
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Book Description
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.
Author: 応用物理学会
Publisher:
ISBN: 9784863483781
Category :
Languages : en
Pages : 380
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Book Description
Author: Hiroshi Yano
Publisher: Trans Tech Publications Ltd
ISBN: 3035735794
Category : Science
Languages : en
Pages : 1196
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Book Description
Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 0429583958
Category : Science
Languages : en
Pages : 465
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Book Description
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author: Peter M. Gammon
Publisher: Trans Tech Publications Ltd
ISBN: 3035733325
Category : Technology & Engineering
Languages : en
Pages : 916
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Book Description
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Author: Roland Madar
Publisher: Trans Tech Publications Ltd
ISBN: 3035706298
Category : Technology & Engineering
Languages : en
Pages : 1548
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Book Description
Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Author: Didier Chaussende
Publisher: Trans Tech Publications Ltd
ISBN: 3038269433
Category : Technology & Engineering
Languages : en
Pages : 1078
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Book Description
Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Author: Robert P. Devaty
Publisher: Trans Tech Publications Ltd
ISBN: 3038130532
Category : Technology & Engineering
Languages : en
Pages : 1670
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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Author: Michael G. Spencer
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 768
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Book Description
USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding
