Silicon Carbide 2006--materials, Processing and Devices PDF Download
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Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 466
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Book Description
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 466
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Book Description
Author: Michael Dudley
Publisher:
ISBN: 9781558998674
Category : Science
Languages : en
Pages : 496
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Book Description
Author: Zhe Chuan Feng
Publisher:
ISBN: 9780429209789
Category : Silicon carbide
Languages : en
Pages : 389
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 0
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Book Description
Author: Feng Zhao
Publisher:
ISBN: 9781510805521
Category : Materials science
Languages : en
Pages : 198
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Book Description
Author: Stephen E. Saddow
Publisher: Cambridge University Press
ISBN: 9781627482400
Category : Materials science
Languages : en
Pages : 130
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Book Description
Author: Chuan Feng Zhe
Publisher: CRC Press
ISBN: 1591690234
Category : Technology & Engineering
Languages : en
Pages : 412
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Book Description
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Author: Moumita Mukherjee
Publisher: IntechOpen
ISBN: 9789533079684
Category : Technology & Engineering
Languages : en
Pages : 560
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Book Description
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 241
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Book Description
Author: Moumita Mukherjee
Publisher: IntechOpen
ISBN: 9789533079684
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
