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Author: Arup Bhattacharyya
Publisher: CRC Press
ISBN: 1351798324
Category : Technology & Engineering
Languages : en
Pages : 512
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Book Description
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: Arup Bhattacharyya
Publisher: CRC Press
ISBN: 1351798324
Category : Technology & Engineering
Languages : en
Pages : 512
Get Book Here
Book Description
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: Arup Bhattacharyya
Publisher: CRC Press
ISBN: 1351798316
Category : Technology & Engineering
Languages : en
Pages : 835
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Book Description
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: Barbara de Salvo
Publisher: John Wiley & Sons
ISBN: 1118617800
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author: William D. Brown
Publisher: Wiley-IEEE Press
ISBN:
Category : Computers
Languages : en
Pages : 624
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Book Description
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
As CMOS technology extends to and beyond 65-nm technology node, many challenges to MOSFET were raised. The industrial and academic communities are aggressively searching for solutions to meet these challenges: (1) non-classical CMOS to extend the life of CMOS technology, and (2) fundamentally new technologies to replace CMOS technology including molecular electronics. The approach of hybrid silicon/molecular electronics is to provide a smooth transition technology by integrating molecular intrinsic scalability and diverse properties with the vast infrastructure of traditional MOS technology. The focus of this research is on integrating redox-active, organic molecules into Si-based structures to first, characterize and understand the properties of molecules; second, generate a new class of hybrid silicon/molecular devices for memory applications; and third, open a new way to develop purely molecular-scale devices. This dissertation has concentrated on the fabrication, characterization and simulation of hybrid CMOS/molecular devices for memory applications: (1) Specific procedures have been successfully developed for attaching redox-active, tightly-bonded, well-packed, molecular self-assembled monolayers on Si and SiO2 surfaces via solution-phase or vapor-phase deposition. (2) An electrolyte/molecule/Si structure has been implemented for electrical characterizations and theoretical simulations to understand the molecules and their application in memory devices, including DRAM and FLASH devices. (3) Two different strategies to achieve multibit memory have been developed and optimized using the methods of attaching mixed monolayers and stacked multilayer films. (4) Molecular multilayer films with very high surface coverage have been achieved for application in memory devices. Metal/molecule/Si sandwich structures using molecular multilayer films were fabricated and exhibited nonvolatile electrical switching properties. A set of control experiments indicate that these sw.
Author:
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 724
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Book Description
Author: Isodiana Crupi
Publisher: LAP Lambert Academic Publishing
ISBN: 9783843383462
Category :
Languages : en
Pages : 124
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Book Description
Our daily life tells us that new technologies are continuously developed. Personal computer, cellular phones, digital camera, mp3 player pervade our life. Looking into the recent past, electronic devices have been proliferated reduced in the size and improved in the performances. Since memories are present in almost every electronic system, these technological advances depend on the development of the semiconductor memory itself. Since the very beginning of such development, the information in conventional non volatile memory device can be stored in a conductive floating gate or in an insulating layer such as in MNOS. Over the years the memory market has been continuously increasing and this has led, in the 1995, to the introduction of a new memory cell based on discrete traps. It was already clear at that point that the realization of such memory cell would be difficult. The scientific community is still very uncertain about the questions whether, and how such device could work. Since then, there has been a lot of progress in the field of memory cell based on discrete traps, but the basic questions about the real advantages offered by such memory devices are still open today.
Author: Sangeeta Singh
Publisher: Springer
ISBN: 9789819746224
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.
Author: Jung-Chih Chiao
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9780819451699
Category : Art
Languages : en
Pages : 612
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Book Description
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Author: Osama Munir Nayfeh
Publisher:
ISBN:
Category :
Languages : en
Pages : 210
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Book Description
(Cont.) Energy band analysis was used to understand the nature of charging, hole-type versus electron-type and pure hole-type charging was shown to occur due to the characteristics of ultra-small silicon nanoparticles: large energy gap, large charging energy, and consequently small electron affinity. The retention time behavior of the 1.0 nm nanoparticle device was shown to be reduced due to a reduced valence band-offset with SiO2, however the programming time is shown to be dramatically reduced over that of conventional bulk devices. Quantum mechanical tunneling calculations were used to explore and predict routes for increasing the retention behavior by modulating the tunneling distance and experimental devices based on these calculations were fabricated in the SiO2 system to study experimentally directly these dependencies.
