Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference PDF full book. Access full book title Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference by C A J Ammerlaan. Download full books in PDF and EPUB format.
Author: C A J Ammerlaan
Publisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
Get Book Here
Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Author: C A J Ammerlaan
Publisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
Get Book Here
Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Author:
Publisher: Academic Press
ISBN: 0080525253
Category : Science
Languages : en
Pages : 541
Get Book Here
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 870
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 732
Get Book Here
Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 726
Get Book Here
Book Description
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.
Author: H Sakaki
Publisher: CRC Press
ISBN: 1000112330
Category : Science
Languages : en
Pages : 919
Get Book Here
Book Description
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Author: Leon Hsu
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 360
Get Book Here
Book Description
Author: Bernard Pajot
Publisher: Springer Science & Business Media
ISBN: 3540959564
Category : Science
Languages : en
Pages : 487
Get Book Here
Book Description
Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals and also on their kinetics and transformations under annealing. After an introduction of the bulk optical properties of semiconductors and insulators and of impurities in crystals, this book presents the physical bases necessary for the understanding of impurity spectra. The description of various set-ups and accessories used in absorption spectroscopy is followed by a presentation of experimental results on specific impurities and classes of impurities and their relation with those obtained by various computation and by other experimental techniques.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 774
Get Book Here
Book Description
English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.
Author: J.L Reno
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
Get Book Here
Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
