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Author: J. S. Blakemore
Publisher: Elsevier
ISBN: 1483148947
Category : Science
Languages : en
Pages : 393
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Book Description
Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a ""quasi-equilibrium"" condition is inappreciably different from that of thermal equilibrium itself. Thus the results of Part I are not invalidated when the properties of a semiconductor are measured using small current densities. Part II considers non-equilibrium statistics for semiconductors with appreciable excess carrier densities. The various kinds of recombination mechanism are examined, and the consequences discussed for steady state and transient situations. The subject matter of this book was deliberately restricted in scope in order to be of maximum value to scientists with an active interest in the basic properties of semiconducting materials.
Author: J. S. Blakemore
Publisher: Elsevier
ISBN: 1483148947
Category : Science
Languages : en
Pages : 393
Get Book Here
Book Description
Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a ""quasi-equilibrium"" condition is inappreciably different from that of thermal equilibrium itself. Thus the results of Part I are not invalidated when the properties of a semiconductor are measured using small current densities. Part II considers non-equilibrium statistics for semiconductors with appreciable excess carrier densities. The various kinds of recombination mechanism are examined, and the consequences discussed for steady state and transient situations. The subject matter of this book was deliberately restricted in scope in order to be of maximum value to scientists with an active interest in the basic properties of semiconducting materials.
Author: J. S. Blakemore
Publisher: Courier Corporation
ISBN: 0486495027
Category : Science
Languages : en
Pages : 404
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Book Description
In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination. 1962 edition.
Author: Sheng S. Li
Publisher: Springer Science & Business Media
ISBN: 146130489X
Category : Science
Languages : en
Pages : 514
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Book Description
The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Author: Ravindra Khattree
Publisher: Gulf Professional Publishing
ISBN: 9780444506146
Category : Mathematics
Languages : en
Pages : 1224
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Book Description
This volume presents an exposition of topics in industrial statistics. It serves as a reference for researchers in industrial statistics/industrial engineering and a source of information for practicing statisticians/industrial engineers. A variety of topics in the areas of industrial process monitoring, industrial experimentation, industrial modelling and data analysis are covered and are authored by leading researchers or practitioners in the particular specialized topic. Targeting the audiences of researchers in academia as well as practitioners and consultants in industry, the book provides comprehensive accounts of the relevant topics. In addition, whenever applicable ample data analytic illustrations are provided with the help of real world data.
Author: Douglas W. Webbink
Publisher:
ISBN:
Category : Electronic industries
Languages : en
Pages : 224
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Book Description
Author: Otfried Madelung
Publisher: Springer Science & Business Media
ISBN: 3642188656
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.
Author: Karlheinz Seeger
Publisher: Springer Science & Business Media
ISBN: 3662098555
Category : Science
Languages : en
Pages : 548
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Book Description
This book will be useful to solid-state scientists, device engineers, and students involved in semiconductor design and technology. It provides a lucid account of band structure, density of states, charge transport, energy transport, and optical processes, along with a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, and the quantum Hall effect. This 8th edition has been revised and updated, including several new sections.
Author: Debdeep Jena
Publisher: Oxford University Press
ISBN: 0198856849
Category : Science
Languages : en
Pages : 897
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Book Description
"Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory". - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.
Author: M. Balkanski
Publisher: Oxford University Press
ISBN: 9780198517405
Category : Science
Languages : en
Pages : 516
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Book Description
This textbook covers the basic physics of semiconductors and their applications to practical devices, with emphasis on the basic physical principles upon which these devices operate. Extensive use of figures is made to enhance the clarity of the presentation and to establish contact with the experimental side of the topic. Graduate students and lecturers in semiconductor physics, condensed matter physics, electromagnetic theory, and quantum mechanics will find this a useful textbook and reference work.
Author: Peter A. Markowich
Publisher: Springer Science & Business Media
ISBN: 3709169615
Category : Mathematics
Languages : en
Pages : 261
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Book Description
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
