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Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
Get Book Here
Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: Thomas Schäpers
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110639327
Category : Science
Languages : en
Pages : 626
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Book Description
This revised and expanded edition of the first comprehensive introduction to the rapidly-evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Moreover, the book now also includes spin-based optics, topological materials and insulators, and the quantum spin Hall effect.
Author: Jianbai Xia
Publisher: World Scientific
ISBN: 9814327905
Category : Science
Languages : en
Pages : 550
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Book Description
Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.
Author: Thomas Schäpers
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110639009
Category : Science
Languages : en
Pages : 428
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Book Description
This revised and expanded edition of the first comprehensive introduction to the rapidly-evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Moreover, the book now also includes spin-based optics, topological materials and insulators, and the quantum spin Hall effect.
Author: Puja Dey
Publisher: Springer Nature
ISBN: 9811600694
Category : Science
Languages : en
Pages : 287
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Book Description
This book highlights the overview of Spintronics, including What is Spintronics ?; Why Do We Need Spintronics ?; Comparative merit-demerit of Spintronics and Electronics ; Research Efforts put on Spintronics ; Quantum Mechanics of Spin; Dynamics of magnetic moments : Landau-Lifshitz-Gilbert Equation; Spin-Dependent Band Gap in Ferromagnetic Materials; Functionality of ‘Spin’ in Spintronics; Different Branches of Spintronics etc. Some important notions on basic elements of Spintronics are discussed here, such as – Spin Polarization, Spin Filter Effect, Spin Generation and Injection, Spin Accumulation, Different kinds of Spin Relaxation Phenomena, Spin Valve, Spin Extraction, Spin Hall Effect, Spin Seebeck Effect, Spin Current Measurement Mechanism, Magnetoresistance and its different kinds etc. Concept of Giant Magnetoresistance (GMR), different types of GMR, qualitative and quantitative explanation of GMR employing Resistor Network Theory are presented here. Tunnelling Magnetoresistance (TMR), Magnetic Junctions, Effect of various parameters on TMR, Measurement of spin relaxation length and time in the spacer layer are covered here. This book highlights the concept of Spin Transfer Torque (STT), STT in Ferromagnetic Layer Structures, STT driven Magnetization Dynamics, STT in Magnetic Multilayer Nanopillar etc. This book also sheds light on Magnetic Domain Wall (MDW) Motion, Ratchet Effect in MDW motion, MDW motion velocity measurements, Current-driven MDW motion, etc. The book deals with the emerging field of spintronics, i.e., Opto-spintronics. Special emphasis is given on ultrafast optical controlling of magnetic states of antiferromagnet, Spin-photon interaction, Faraday Effect, Inverse Faraday Effect and outline of different all-optical spintronic switching. One more promising branch i.e., Terahertz Spintronics is also covered. Principle of operation of spintronic terahertz emitter, choice of materials, terahertz writing of an antiferromagnetic magnetic memory device is discussed. Brief introduction of Semiconductor spintronics is presented that includes dilute magnetic semiconductor, feromagnetic semiconductor, spin polarized semiconductor devices, three terminal spintronic devices, Spin transistor, Spin-LED, and Spin-Laser. This book also emphasizes on several modern spintronics devices that includes GMR Read Head of Modern Hard Disk Drive, MRAM, Position Sensor, Biosensor, Magnetic Field sensor, Three Terminal Magnetic Memory Devices, Spin FET, Race Track Memory and Quantum Computing.
Author: Sadamichi Maekawa
Publisher: Oxford University Press, USA
ISBN: 0198568215
Category : Computers
Languages : en
Pages : 413
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Book Description
Recently, a new branch of physics and nanotechnology called The aim of this book is tod, which aims at simultaneously present new directions in the development of spin electronics in both the basic physics and the technologywhich will become the foundation of future electronics.ich will become the foundation of future electronics.
Author: Weimin Chen
Publisher: CRC Press
ISBN: 9814267678
Category : Technology & Engineering
Languages : en
Pages : 371
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Book Description
This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 1846283590
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author: Vladimir Litvinov
Publisher: CRC Press
ISBN: 1040029205
Category : Technology & Engineering
Languages : en
Pages : 240
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Book Description
This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state—an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig–Huges–Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number |C |=2. The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way. Although writings on this topic appear in the current literature, this book is focused on the materials science side of the question, providing a theoretical background for the most common concepts of spin-electron physics. It covers generic topics in spintronics without entering into device specifics since its aim is to give instructions to be used in solving problems of a general and specific nature. It is intended for graduate students and will serve as an introductory course in this specific field of solid state theory and applications.
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
