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Author: V. Stefan
Publisher: Stefan University Press
ISBN: 9781889545110
Category : Science
Languages : en
Pages : 160
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Book Description
Author: V. Stefan
Publisher: Stefan University Press
ISBN: 9781889545110
Category : Science
Languages : en
Pages : 160
Get Book Here
Book Description
Author:
Publisher: Elsevier
ISBN: 0323958192
Category : Technology & Engineering
Languages : en
Pages : 2153
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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Second Edition, Three Volume Set captures the breadth of this important field and presents it in a single source to the large audience who study, make, and use semiconductor devices. Written and edited by a truly international team of experts and newly updated to capture key advancements in the field, this work delivers an objective yet cohesive review of the semiconductor world.The work is divided into three sections, fully updated and expanded from the first edition. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics, especially quantum phenomena. The second section deals largely with the transformation of the conceptual framework of solid-state physics into devices and systems, which require the growth of high-purity or doped, bulk and epitaxial materials with low defect density and well-controlled electrical and optical properties. The third section is devoted to design, fabrication and assessment of discrete and integrated semiconductor devices. It will cover the entire spectrum of devices we see all around us, for telecommunications, computing, automation, displays, illumination and consumer electronics. - Provides a comprehensive global picture of the semiconductor world - Written and Edited by an international team of experts - Compiles the most important semiconductor knowledge into one comprehensive resource - Moves from fundamentals and theory to more advanced knowledge, such as applications, allowing readers to gain a deeper understanding of the field
Author: Aleksandr Mikhaĭlovich Prokhorov
Publisher: Stefan University Press
ISBN: 9781889545233
Category : Technology & Engineering
Languages : en
Pages : 290
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Book Description
Author: V. Alexander Stefan
Publisher: Stefan University Press
ISBN: 1889545287
Category : Ferroelectric crystals
Languages : en
Pages : 218
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Book Description
CONTENTS Preface, XI List of Contributors, XIII Part I. REPORTS. Materials Parameters Determining the Performance of 3-3 Piezocomposites C.R. Bowen, A. Perry, R. Stevens, and S. Mahon.............................................. 3 Dielectric Permittivity and Hysteresis of PZT Aerogels Stefan Geis, Jochen Fricke................................................................................ 23 Superfine Anomalies of the Cubic-Tetragonal Transition in the Perovskite-Type Ferroelectrics Detected by “mk-stabilized cell” Akira Kojima, Yukio Yoshimura, Hiroshi Iwasaki, and Ken-ichi Tozaki.......................................................................................... 33 NMR Study on m3h(seo4)2 (m: k, rb) Yasumitsu Matsuo, Keisuke Takahashi, and Seiichiro Ikehata............................. 51 Photovoltaic Effect in Pb(Zr,Ti)O3 (PZT)-Based Ceramics and Development for Photostrictor Application Kazuhiro Nonaka, Morito Akiyama, Chao-Nan Xu, Tsuyoshi Hagio, and Akira Takase.................................................................... 65 Novel Electronic Phase Transition in ii-vi Ferroelectric Semiconductor znO A. Onodera and H. Satoh................................................................................. 93 Brillouin Scattering Study of Structural Phase Transition in the kno3 Crystal Yasunari Takagi............................................................................................... 113 New Technologies for Future FeRAMs K. Uchiyama, M. Kazumura, Y. Shimada, T. Otsuki, N. Solayappan, V. Joshi, and C.A. Paz de Araujo............................................... 125 NANOCRYSTALLINE PEROVSKITE FILMS: FERROELECTRICS AND RELAXORS C. Ziebert, J.K. Krüger, H. Schmitt, A. Sternberg K.-H. Ehses, M. Marx................................................................................... 135 Part II. BRIEF REPORTS Studies of Ferroelectric Thin Film and Film-Based Device Processes via In Situ Analytic Techniques O. Auciello, S.K. Streiffer, G.B. Stephenson, J.A. Eastman, G. Bai, A.R. Krauss, J. Im, A.M. Dhote, C. Thompson, E.A. Irene, Y. Gao, A.H. Muller, M.J. Bedzyk, A. Kazimirov, D. Marasco, V.P. Dravid, A. Gruverman, S. Aggarwal, R. Ramesh, S.-H. Kim, A.I. Kingon, and C.B. Eom.................................................................................................. 155 The Spherical Random Bond – Random Field Model of Relaxor Ferroelectrics: Theory and Experiments R. Blinc, R. Pirc, B. Zalar, and A. Gregorovic.................................................... 159 Stabilization of Ferroelectricity in Quantum Paraelectrics by Isotopic Substitution A. Bussmann-Holder, H. Buttner, and A.R. Bishop............................................ 165 New Understanding of the Phases Transition Mechanism of Hydrogen-Bonded Ferroelectrics A. Bussmann-Holder, Naresh Dalal, Riqiang Fu, and Ricardo Migoni................... 167 Two Dimensional Ferroelectrics V.M. Fridkin, L.M. Blinov, S.P. Palto, S.G. Yudin, S. Ducharme, P.A. Dowben, and A.V. Bune.......................................................................... 169 Ferroelastic Twinning in Some Extremely Plastic Crystals Lyubov Kirpichnikova....................................................................................... 171 Investigation of the Anisotropy of srbi2ta2o9 and srbi2nb2o9 Through Epitaxial Growth J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley............................................................................................. 173 New Ideas in Relaxor Theory R.F. Mamin..................................................................................................... 179 Evaluation of Ferroelectric Domains in Lead Zirconate Titanate Ceramics by Poling Fields Toshio Ogawa.................................................................................................. 181 Metal-Organic Chemical Vapor Deposited Ceramic Thin Films for Future Memory Applications M. Schumacher, J. Lindner, F. Schienle, D. Burgess, P. Strzyzewski, M. Dauelsberg, E. Merz, and H. Juergensen............................... 185 Dynamic and Static Aspects of the Antiferroelectric Phase Transition in rb3h1-xdx(so4)2 Crystals: An 87rb-nmr Study Andreas Titze and Roland Boehmer.................................................................. 187 Key Word Index………………………………………………………………………. 189 Contents of FERROELECTRICS.Vol.2. Frontier in Science and Technology Series. List of Titles. FSRC BOOKS of ABSTRACTS in Science and Technology Conference Series. List of Titles. F S R C. A Brief Info.
Author: Kenneth A. Jackson
Publisher: Wiley-VCH
ISBN: 9783527298341
Category : Technology & Engineering
Languages : en
Pages : 852
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Book Description
Covering the structure and properties of semiconductors, this volume places particular emphasis on concepts relevant to semiconductor technology. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors.
Author: Sergey Rumyantsev
Publisher: World Scientific
ISBN: 981447777X
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author: V. Alexander STEFAN
Publisher: Stefan University Press
ISBN:
Category : Education
Languages : en
Pages : 1058
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Book Description
V. Alexander STEFAN The Open World MANIFESTO Novus Ordo Scientifico-Technologicus. QUALB Coeptis New Order Scientific-Technological. QUALB Cooperates CONTENTS BOOK 1 SCIENCE AND TECHNOLOGY: A New Earth and a New Atlantis Universe: Our Very Own 393 BOOK 2 HUMAN BEINGS; OUR ID-NUMBERS; OUR CONSCIOUSNESS of TIME 558 BOOK 3 FREEDOM, DEMOCRACY, and PLURALISM: The Dawning of the Terrestrial Civilization 618 BOOK 4 THE AGE OF EDUCATION: CREATIVE EDUCATION versus DRILL EDUCATION 699 BOOK 5 HUMAN BEING and QUALB the GIVER, the SUPREME BEING: Science/Technology and Religion 754
Author: V. Alexander Stefan
Publisher: Stefan University Press
ISBN: 1889545937
Category : Biography & Autobiography
Languages : en
Pages : 409
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Book Description
Author: Robert F. Pierret
Publisher: Prentice Hall
ISBN: 9780201122954
Category : Technology & Engineering
Languages : en
Pages : 146
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Book Description
This book presents those terms, concepts, equations, and models that are routinely used in describing the operational behavior of solid state devices. The second edition provides many new problems and illustrative examples.
Author: Andrej Stefan
Publisher: Stefan University Press
ISBN: 1889545554
Category : Technology & Engineering
Languages : en
Pages : 97
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Book Description
