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Author: Zhenghao Gan
Publisher: McGraw Hill Professional
ISBN: 007175427X
Category : Technology & Engineering
Languages : en
Pages : 624
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Book Description
Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
Author: Zhenghao Gan
Publisher: McGraw Hill Professional
ISBN: 007175427X
Category : Technology & Engineering
Languages : en
Pages : 624
Get Book Here
Book Description
Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
Author: A. Christou
Publisher: Springer Science & Business Media
ISBN: 9400924828
Category : Technology & Engineering
Languages : en
Pages : 571
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Book Description
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Author: Robert Herrick
Publisher: Woodhead Publishing
ISBN: 0128192550
Category : Technology & Engineering
Languages : en
Pages : 336
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Book Description
Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies.This book is suitable for new entrants to the field of optoelectronics working in R&D. - Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry - Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products - Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more
Author: Andrea Chen
Publisher: CRC Press
ISBN: 1439862079
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. By tying together the disparate elements essential to a semiconductor package, the authors show how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world. The text also covers packaging materials for MEMS, solar technology, and LEDs and explores future trends in semiconductor packages.
Author: J. W. McPherson
Publisher: Springer Science & Business Media
ISBN: 3319001221
Category : Technology & Engineering
Languages : en
Pages : 406
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Book Description
"Reliability Physics and Engineering" provides critically important information for designing and building reliable cost-effective products. The textbook contains numerous example problems with solutions. Included at the end of each chapter are exercise problems and answers. "Reliability Physics and Engineering" is a useful resource for students, engineers, and materials scientists.
Author: Osamu Ueda
Publisher: Springer Science & Business Media
ISBN: 1461443377
Category : Science
Languages : en
Pages : 618
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Book Description
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.
Author: Milton Ohring
Publisher: Academic Press
ISBN: 0080575528
Category : Technology & Engineering
Languages : en
Pages : 759
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Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author: Giulio Di Giacomo
Publisher: McGraw-Hill Professional Publishing
ISBN: 9780070170247
Category : Microelectronic packaging
Languages : en
Pages : 0
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Book Description
This text looks at predicting and extending the functional life of semiconductor components. Using empirical modelling, the author covers major types of failure mechanisms that can greatly reduce the active life of semiconductor components, including interconnection fatigue and electromigration.
Author: Allan H Johnston
Publisher: World Scientific
ISBN: 9814467650
Category : Technology & Engineering
Languages : en
Pages : 376
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Book Description
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author: Josef Lutz
Publisher:
ISBN: 9783319709185
Category : Electronic book
Languages : en
Pages :
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Book Description
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
