Semiconductor Modeling Techniques PDF Download
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Author: Xavier Marie
Publisher: Springer Science & Business Media
ISBN: 3642275125
Category : Technology & Engineering
Languages : en
Pages : 267
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Book Description
This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
Author: Xavier Marie
Publisher: Springer Science & Business Media
ISBN: 3642275125
Category : Technology & Engineering
Languages : en
Pages : 267
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Book Description
This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author: Roy Leventhal
Publisher: Springer Science & Business Media
ISBN: 0387241604
Category : Technology & Engineering
Languages : en
Pages : 769
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Book Description
Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
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Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author: Richard Haight
Publisher: World Scientific
ISBN: 9814322849
Category : Science
Languages : en
Pages : 346
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Book Description
As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 9783211821107
Category : Technology & Engineering
Languages : en
Pages : 382
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Book Description
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Author: C. Moglestue
Publisher: Springer Science & Business Media
ISBN: 9401581339
Category : Computers
Languages : en
Pages : 343
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Book Description
Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Author: Madhavan Swaminathan
Publisher: Pearson Education
ISBN: 0132797178
Category : Technology & Engineering
Languages : en
Pages : 599
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Book Description
The First Comprehensive, Example-Rich Guide to Power Integrity Modeling Professionals such as signal integrity engineers, package designers, and system architects need to thoroughly understand signal and power integrity issues in order to successfully design packages and boards for high speed systems. Now, for the first time, there's a complete guide to power integrity modeling: everything you need to know, from the basics through the state of the art. Using realistic case studies and downloadable software examples, two leading experts demonstrate today's best techniques for designing and modeling interconnects to efficiently distribute power and minimize noise. The authors carefully introduce the core concepts of power distribution design, systematically present and compare leading techniques for modeling noise, and link these techniques to specific applications. Their many examples range from the simplest (using analytical equations to compute power supply noise) through complex system-level applications. The authors Introduce power delivery network components, analysis, high-frequency measurement, and modeling requirements Thoroughly explain modeling of power/ground planes, including plane behavior, lumped modeling, distributed circuit-based approaches, and much more Offer in-depth coverage of simultaneous switching noise, including modeling for return currents using time- and frequency-domain analysis Introduce several leading time-domain simulation methods, such as macromodeling, and discuss their advantages and disadvantages Present the application of the modeling methods on several advanced case studies that include high-speed servers, high-speed differential signaling, chip package analysis, materials characterization, embedded decoupling capacitors, and electromagnetic bandgap structures This book's system-level focus and practical examples will make it indispensable for every student and professional concerned with power integrity, including electrical engineers, system designers, signal integrity engineers, and materials scientists. It will also be valuable to developers building software that helps to analyze high-speed systems.
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525
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Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
