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Author: P.T. Landsberg
Publisher: Elsevier
ISBN: 1483291103
Category : Science
Languages : en
Pages : 1219
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Book Description
Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.
Author: P.T. Landsberg
Publisher: Elsevier
ISBN: 1483291103
Category : Science
Languages : en
Pages : 1219
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Book Description
Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.
Author: Iwao Ohdomari
Publisher: Elsevier Publishing Company
ISBN: 9780444818898
Category : Science
Languages : en
Pages : 583
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Book Description
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization in...
Author: Peter YU
Publisher: Springer Science & Business Media
ISBN: 3642007104
Category : Technology & Engineering
Languages : en
Pages : 778
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Book Description
Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Author: Peter YU
Publisher: Springer Science & Business Media
ISBN: 3662033135
Category : Science
Languages : en
Pages : 627
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Book Description
Bridging the gap between a general solid-state physics textbook and research articles, the renowned authors provide detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. Their approach is a physical and intuitive one, rather than formal and pedantic. This textbook has been written with both students and researchers in mind, and the authors therefore present theories to explain experimental results. Throughout, the emphasis is on understanding the physical properties of Si, and similar tetrahedrally coordinated semiconductors, with explanations based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures and problems -- many of the latter 'lead students by the hand' to arrive at the results.
Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269
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Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author: Jarek Dabrowski
Publisher: World Scientific
ISBN: 9789810232863
Category : Science
Languages : en
Pages : 580
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Book Description
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.
Author: Karl W. Böer
Publisher: Springer Science & Business Media
ISBN: 9401129126
Category : Technology & Engineering
Languages : en
Pages : 1477
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Book Description
Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left).
Author: G.V. Marr
Publisher: Elsevier
ISBN: 1483290638
Category : Science
Languages : en
Pages : 859
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Book Description
Volume 2 of this series concentrates on the use of synchrotron radiation which covers that region of the electromagnetic spectrum which extends from about 10eV to 3keV in photon energy and is essentially the region where the radiation is strongly absorbed by atmospheric gases. It therefore has to make extensive use of a high vacuum to transport the radiation to the workstation where the presence of hard X-rays can cause extensive damage to both the optics and the targets used in the experimental rigs. The topics chosen for this volume have been limited to the disciplines of physics and chemistry.
Author: Ralf Vanselow
Publisher: Springer Science & Business Media
ISBN: 3642739024
Category : Science
Languages : en
Pages : 626
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Book Description
This volume contains review articles written by the invited speakers at the eighth International Summer Institute in Surface Science (ISISS 1987), held at the University of Wisconsin-Milwaukee in August of 1987. During the course of ISISS, invited speakers, all internationally recognized experts in the various fields of surface science, present tutorial review lectures. In addition, these experts are asked to write review articles on their lecture topic. Former ISISS speakers serve as advisors concerning the selection of speakers and lecture topics. Em phasis is given to those areas which have not been covered in depth by recent Summer Institutes, as well as to areas which have recently gained in significance and in which important progress has been made. Because of space limitations, no individual volume of Chemistry and Physics of Solid Surfaces can possibly cover the whole area of modem surface science, or even give a complete survey of recent pro gress in the field. However, an attempt is made to present a balanced overview in the series as a whole. With its comprehensive literature references and extensive subject indices, this series has become a valu able resource for experts and students alike. The collected articles, which stress particularly the gas-solid interface, have been published under the following titles: Surface Science: Recent Progress and Perspectives, Crit. Rev. Solid State Sci. 4, 125-559 (1974) Chemistry and Physics of Solid Surfaces, Vols. I, II, and III (CRC Press Boca Raton, FL 1976, 1979, and 1982); Vols.
Author: R.S. Bauer
Publisher: Elsevier
ISBN: 0444600167
Category : Science
Languages : en
Pages : 663
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Book Description
Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
