Self-aligned Polysilicon Gate Metal-oxide-semiconductor Field Effect Transistor for Large Area Electronics PDF Download
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Author: Ming Yuan Zhao
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 0
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Book Description
Currently, the established large area technology is amorphous silicon where device performance is sacrificed for uniformity and low cost of fabrication. In this research, we investigate crystalline silicon technology for large area application that requires high performance devices. For example, digital X-ray tomosynthesis is one application where amorphous silicon technology cannot satisfy the requirements of low noise and real-time operation. In this work, self-aligned polysilicon gate MOSFET was developed. To achieve this goal, gate dielectric materials and gate materials were studied and a self-aligned MOSFET was developed. A mask set was designed in Cadence and devices were fabricated in the SFU IMMR fabrication facility. Characterization of the devices by C-V and I-V measurements were carried out. The results indicate that an inhouse fabrication of uniform self-aligned polysilicon gate MOSFET based electronics is possible if oxide quality can be maintained.
Author: Ming Yuan Zhao
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 0
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Book Description
Currently, the established large area technology is amorphous silicon where device performance is sacrificed for uniformity and low cost of fabrication. In this research, we investigate crystalline silicon technology for large area application that requires high performance devices. For example, digital X-ray tomosynthesis is one application where amorphous silicon technology cannot satisfy the requirements of low noise and real-time operation. In this work, self-aligned polysilicon gate MOSFET was developed. To achieve this goal, gate dielectric materials and gate materials were studied and a self-aligned MOSFET was developed. A mask set was designed in Cadence and devices were fabricated in the SFU IMMR fabrication facility. Characterization of the devices by C-V and I-V measurements were carried out. The results indicate that an inhouse fabrication of uniform self-aligned polysilicon gate MOSFET based electronics is possible if oxide quality can be maintained.
Author: Weize Xiong
Publisher:
ISBN:
Category :
Languages : en
Pages : 236
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Author: 陳旻浩
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher: ASM International
ISBN: 9780871702852
Category : Technology & Engineering
Languages : en
Pages : 1234
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Book Description
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
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Author: Rodolfo Rodriguez Davila
Publisher:
ISBN:
Category : Optical detectors
Languages : en
Pages :
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Book Description
Large-area electronics are considered to be a potential improvement to radiation detectors due to their low cost when compared to conventional systems. Currently, low-cost solutions cannot be achieved using conventional silicon technology. On the other hand, metal-oxide semiconductor-based thin-film transistors have shown great potential for large-area electronics. This potential is mostly due to the low processing temperature, and relatively simple fabrication methods when compared to Si-based technology. However, challenges in implementing oxide-based circuits still exist. For example, the deposition of the gate dielectric layers is at these low temperatures, which might result in a less than ideal gate dielectric with a higher oxide trap density; detrimental to the overall TFT performance and stability. Other aspects are the quality of the oxide semiconductor as well as the type of device to be fabricated (MOSFET, and MESFET). In this dissertation, the design and development of highly stable oxide-based field-effect transistors take place. The achieved performance and stability are by careful control of the metal-oxide-semiconductor deposition parameters. Moreover, several process integration strategies for ZnO-based preamplifiers and ultra-violet (UV) photodetectors appear. The radiation detectors show high sensitivity and relatively fast response to UV. A model to explain the increased stability of the resulting devices is also introduced.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
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Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 139420244X
Category : Technology & Engineering
Languages : en
Pages : 469
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Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author:
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ISBN:
Category :
Languages : en
Pages :
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Abstract: GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al2 O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.
