Scanning Tunneling Microscopy Studies of Silicon Molecular Beam Epitaxy PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Scanning Tunneling Microscopy Studies of Silicon Molecular Beam Epitaxy PDF full book. Access full book title Scanning Tunneling Microscopy Studies of Silicon Molecular Beam Epitaxy by M. G. Lagally. Download full books in PDF and EPUB format.
Author: M. G. Lagally
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Get Book Here
Book Description
It has been recognized since the beginning of serious studies in surface science that kinetic processes underpin a whole range of surface phenomena, including, for example, phase transformations and ordering, epitaxial growth, and surface chemical behavior. However, with few exceptions, available techniques have not lent themselves well to obtaining a truly microscopic view of such kinetic processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (i.e., large dynamic range in resolution) scanning tunneling microscopy (STM) does afford this opportunity. In this talk, we briefly review the types of surface kinetics measurements that can be made using STM. It should be pointed out that the use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field; hence much remains to be accomplished. We have concentrated our investigations on the initial stages of molecular beam epitaxy of Si and Ge on Si(001) and will use this surface in our examples.
Author: M. G. Lagally
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Get Book Here
Book Description
It has been recognized since the beginning of serious studies in surface science that kinetic processes underpin a whole range of surface phenomena, including, for example, phase transformations and ordering, epitaxial growth, and surface chemical behavior. However, with few exceptions, available techniques have not lent themselves well to obtaining a truly microscopic view of such kinetic processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (i.e., large dynamic range in resolution) scanning tunneling microscopy (STM) does afford this opportunity. In this talk, we briefly review the types of surface kinetics measurements that can be made using STM. It should be pointed out that the use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field; hence much remains to be accomplished. We have concentrated our investigations on the initial stages of molecular beam epitaxy of Si and Ge on Si(001) and will use this surface in our examples.
Author: Jerome S. Hubacek
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows. With electronic device dimensions shrinking to smaller and smaller sizes, the Si-SiO$sb2$ interface is becoming increasingly important and, although it is the most popular interface used in the microelectronics industry, little is known about the initial stages of oxidation of the Si(100) surface. Scanning tunneling microscopy has been employed to examine Si(100) 2 x 1 surfaces exposed to molecular oxygen in UHV. Ordered rows of bright and dark spots, rotated 45$spcirc$ from the silicon dimer rows, appear in the STM images, suggesting that the Si(100)-SiO$sb2$ interface may be explained with a $beta$-cristobalite(100) structure rotated by 45$spcirc$ on the Si(100) surface.
Author: John Raymond Harper
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
Get Book Here
Book Description
Author: T. Sakurai
Publisher: Springer Science & Business Media
ISBN: 3642569498
Category : Technology & Engineering
Languages : en
Pages : 352
Get Book Here
Book Description
There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the 'scanning probe microscopy (SPM)' family. SPM is not just the most powerful microscope for scientists to image atoms on surfaces, but is also becoming an indispensable tool for manipulating atoms and molecules to construct man-made materials and devices. Its impact has been felt in various fields, from surface physics and chemistry to nano-mechanics, nano-electronics and medical science. Its influence will surely extend further as the years go by, beyond the reach of our present imagination, and new research applications will continue to emerge. This book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their applications to fullerene film growth, SiC surface reconstructions, MBE (molecular beam epitaxy) growth of CaAs, atomic scale manipulation of Si surfaces and meso scopic work function.
Author: Wenzhi Lin
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages :
Get Book Here
Book Description
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093517
Category : Technology & Engineering
Languages : en
Pages : 302
Get Book Here
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Songlin Zuo
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
Get Book Here
Book Description
Author: Fang Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 540
Get Book Here
Book Description
Author: Joseph A. Stroscio
Publisher: Academic Press
ISBN: 1483292878
Category : Science
Languages : en
Pages : 481
Get Book Here
Book Description
Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.
Author: Erwin Kasper
Publisher: Elsevier
ISBN: 0080983685
Category : Technology & Engineering
Languages : en
Pages : 378
Get Book Here
Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.
