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Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773287
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773287
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
Author: Frank Schwierz
Publisher: Pan Stanford Publishing
ISBN: 9814241083
Category : Technology & Engineering
Languages : en
Pages : 349
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Book Description
This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Ban Wong
Publisher: John Wiley & Sons
ISBN: 0471678864
Category : Technology & Engineering
Languages : en
Pages : 413
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Book Description
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author: R. Jacob Baker
Publisher: John Wiley & Sons
ISBN: 0470229411
Category : Technology & Engineering
Languages : en
Pages : 1074
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Book Description
This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Author: David J. Lockwood
Publisher: Springer Science & Business Media
ISBN: 3642105068
Category : Science
Languages : en
Pages : 264
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Book Description
This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.
Author:
Publisher: Elsevier
ISBN: 0081003587
Category : Science
Languages : en
Pages : 636
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Book Description
As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as EUV lithography and multibeam electron beam lithography. These developments in both the industrial and the academic lithography arenas have led to the proliferation of numerous novel approaches to resist chemistry and ingenious extensions of traditional photopolymers. Currently most texts in this area focus on either lithography with perhaps one or two chapters on resists, or on traditional resist materials with relatively little consideration of new approaches. This book therefore aims to bring together the worlds foremost resist development scientists from the various community to produce in one place a definitive description of the many approaches to lithography fabrication. - Assembles up-to-date information from the world's premier resist chemists and technique development lithographers on the properties and capabilities of the wide range of resist materials currently under investigation - Includes information on processing and metrology techniques - Brings together multiple approaches to litho pattern recording from academia and industry in one place
Author: Stephen A. Campbell
Publisher: OUP USA
ISBN: 9780195320176
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Author: Concita Sibilia
Publisher: Springer Science & Business Media
ISBN: 8847008441
Category : Science
Languages : en
Pages : 289
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Book Description
The aim of the work is give an overview of the activity in the field of Photonic Crystal developed in the frame of COST P11 action . The main objective of the COST P11 action was to unify and coordinate national efforts aimed at studying linear and nonlinear optical interactions with Photonic Crystals (PCs), without neglecting an important aspect related to the material research as idea and methods of realizations of 3D PC, together with the development and implementation of measurement techniques for the experimental evaluation of their potential applications in different area, as for example telecommunication with novel optical fibers, lasers, nonlinear multi-functionality, display devices, opto-electronics, sensors. The book contains contributions from authors who gave their lecture at the Cost P11 Training School.
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
