Resistive switching in ZrO2 based metal-oxide-metal structures PDF Download
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Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
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Book Description
Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
Get Book Here
Book Description
Author: Soumen Das
Publisher: Elsevier
ISBN: 012823170X
Category : Technology & Engineering
Languages : en
Pages : 748
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Book Description
Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. - Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications - Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques - Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing
Author: Ye Zhou
Publisher: Royal Society of Chemistry
ISBN: 1839169958
Category : Technology & Engineering
Languages : en
Pages : 641
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Book Description
Advanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.
Author: Panagiotis Dimitrakis
Publisher: Elsevier
ISBN: 0128146303
Category : Technology & Engineering
Languages : en
Pages : 534
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Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author: Junqiao Wu
Publisher: Springer Science & Business Media
ISBN: 1441999310
Category : Technology & Engineering
Languages : en
Pages : 371
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Book Description
Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
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Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1351833359
Category : Technology & Engineering
Languages : en
Pages : 602
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Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Gan Fuxi
Publisher: CRC Press
ISBN: 9814613207
Category : Science
Languages : en
Pages : 730
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Book Description
In the big data era, data storage is one of the cores in the whole information chain, which includes production, transfer, sharing, and finally processing. Over the years, the growth of data volume has been explosive. Today, various storage services need memories with higher density and capacity. Moreover, information storage in the big data applic
Author: Peng Yu
Publisher: Springer Nature
ISBN: 3030358135
Category : Technology & Engineering
Languages : en
Pages : 329
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Book Description
This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.
