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Author: Doo Seok Jeong
Publisher: Forschungszentrum Jülich
ISBN: 3893365796
Category :
Languages : en
Pages : 153
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Book Description
Author: Doo Seok Jeong
Publisher: Forschungszentrum Jülich
ISBN: 3893365796
Category :
Languages : en
Pages : 153
Get Book Here
Book Description
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Daniele Ielmini
Publisher: John Wiley & Sons
ISBN: 3527680934
Category : Technology & Engineering
Languages : en
Pages : 1010
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Book Description
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
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Book Description
Author: Jennifer Rupp
Publisher: Springer Nature
ISBN: 3030424243
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Author: Zhigang Zang
Publisher: John Wiley & Sons
ISBN: 3527352252
Category : Technology & Engineering
Languages : en
Pages : 293
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Book Description
Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.
Author: Jianyong Ouyang
Publisher: Springer
ISBN: 3319315722
Category : Technology & Engineering
Languages : en
Pages : 101
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Book Description
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Science
Languages : en
Pages : 662
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Christian Nauenheim
Publisher: Forschungszentrum Jülich
ISBN: 3893366369
Category :
Languages : en
Pages : 159
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Book Description
Author: Morsi M. Mahmoud
Publisher: John Wiley & Sons
ISBN: 1119543258
Category : Technology & Engineering
Languages : en
Pages : 238
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Book Description
This volume contains 20 manuscripts presented during the Materials Science & Technology 2017 Conference (MS&T'17), held October 8-12, 2017 at the David L. Lawrence Convention Center, Pittsburgh, PA. Papers from the following symposia are included in this volume: 9th International Symposium on Green and Sustainable Technologies for Materials Manufacturing and Processing Advances in Dielectric Materials and Electronic Devices Construction and Building Materials for a Better Environment Innovative Processing and Synthesis of Ceramics, Glasses and Composites Materials Issues in Nuclear Waste Management in the 21st Century Materials Development for Nuclear Applications and Extreme Environments Materials for Nuclear Energy Applications Nanotechnology for Energy, Healthcare and Industry Processing and Performance of Materials Using Microwaves, Electric and Magnetic Fields, Ultrasound, Lasers, and Mechanical Work – Rustum Roy Symposium These symposia provided a forum for scientists, engineers, and technologists to discuss and exchange state-of-the-art ideas, information, and technology on advanced methods and approaches for processing, synthesis, characterization, and applications of ceramics, glasses, and composites. Each manuscript was peer-reviewed using The American Ceramic Society's review process. The editors wish to extend their gratitude and appreciation to their symposium co-organizers, to all of the authors for their valuable submissions, to all the participants and session chairs for their time and effort, and to all the reviewers for their comments and suggestions. We hope that this volume will serve as a useful reference for the professionals working in the field of materials science.
