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Author: Guillaume Cassabois
Publisher:
ISBN:
Category :
Languages : fr
Pages : 183
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Book Description
NOUS AVONS ETUDIE LES MECANISMES RESPONSABLES DE LA PERTE DE COHERENCE DANS DES HETEROSTRUCTURES DE SEMICONDUCTEURS III-V PAR UNE TECHNIQUE LINEAIRE DE CORRELATION INTERFEROMETRIQUE DE LA DIFFUSION RAYLEIGH RESONANTE. CETTE TECHNIQUE REPOSE SUR L'EXCITATION D'UN ECHANTILLON PAR UNE PAIRE D'IMPULSIONS FEMTOSECONDES, COHERENTES, DE MEME INTENSITE ET DECALEES DANS LE TEMPS. LES INTERFERENCES ENTRE LES POLARISATIONS CREEES DANS L'ECHANTILLON PAR LA PAIRE D'IMPULSIONS PRODUISENT DES INTERFERENCES SUR L'EMISSION RESONANTE DU SYSTEME. LEUR CONTRASTE DECROIT AVEC LE RETARD ENTRE LES IMPULSIONS SUR UNE ECHELLE DE TEMPS DONNEE PAR LE TEMPS DE RELAXATION DE COHERENCE OU TEMPS DE DEPHASAGE T 2, DE L'ORDRE DE QUELQUES PICOSECONDES DANS LES HETEROSTRUCTURES DE SEMICONDUCTEURS. NOUS NOUS SOMMES D'ABORD INTERESSES A DES PUITS QUANTIQUES GAAS/AL XGA 1 - XAS PEU PROFONDS OU LA CONCENTRATION EN ALUMINIUM DANS L'ALLIAGE DE BARRIERE VARIE DE 18 A 1,5%. DANS CES PUITS QUANTIQUES, LES EXCITONS SONT DANS UN REGIME DE CONFINEMENT FAIBLE INTERMEDIAIRE ENTRE LES PUITS PROFONDS (2D) ET LE MATERIAU MASSIF (3D). GRACE A DES EXPERIENCES REALISEES POUR DIFFERENTES TEMPERATURES DE L'ECHANTILLON, NOUS AVONS ETUDIE L'INFLUENCE DE LA TRANSITION 2D-3D SUR LES MECANISMES DE DEPHASAGE PAR PHONONS. POUR LES PHONONS ACOUSTIQUES, NOUS METTONS EN EVIDENCE UNE TRANSITION MOLLE ALORS QUE POUR LES PHONONS OPTIQUES, NOUS OBSERVONS UNE RESONANCE DE COUPLAGE POUR LE PUITS X=3,3% OU LES EXCITONS DU PUITS ET DE LA BARRIERE SONT DISTANTS D'UN PHONON OPTIQUE. NOUS AVONS PAR AILLEURS ETUDIE UNE MICROCAVITE DE SEMICONDUCTEURS EN COUPLAGE FORT. DANS CETTE HETEROSTRUCTURE, LES ETATS PROPRES NE SONT PLUS DES EXCITONS MAIS DES ETATS MIXTES EXCITON-PHOTON, LES POLARITONS DE CAVITE. DANS CE SYSTEME, LA RELAXATION DE COHERENCE EST GOUVERNEE PAR DES MECANISMES DE DEPHASAGE DE TYPES TRES DIFFERENTS POUR LES COMPOSANTES EXCITON ET PHOTON, RESPECTIVEMENT. TOUT D'ABORD, PAR DES ETUDES A BASSE TEMPERATURE EN FONCTION DU DESACCORD EN ENERGIE ENTRE LES MODES EXCITON ET PHOTON, NOUS METTONS EN EVIDENCE LES SPECIFICITES DE LA RELAXATION DE COHERENCE DES POLARITONS DE CAVITE. NOUS AVONS DEVELOPPE UN CALCUL DE LA DIFFUSION RAYLEIGH RESONANTE D'UNE MICROCAVITE A PARTIR D'UN MODELE SEMI-CLASSIQUE DE DISPERSION LINEAIRE ET NOUS OBTENONS UN EXCELLENT ACCORD THEORIE/EXPERIENCE. PAR AILLEURS, PAR DES ETUDES EN FONCTION DE LA TEMPERATURE, NOUS AVONS EXAMINE LE DEPHASAGE DES POLARITONS ASSISTE PAR PHONONS ACOUSTIQUES. NOUS METTONS EN EVIDENCE LES LIMITES D'UN MODELE SEMI-CLASSIQUE POUR DECRIRE LA RELAXATION DE COHERENCE EN FONCTION DE LA TEMPERATURE ET NOUS REPRODUISONS NOS DONNEES EXPERIMENTALES A L'AIDE D'UN MODELE QUANTIQUE DE POLARITONS.
Author: Guillaume Cassabois
Publisher:
ISBN:
Category :
Languages : fr
Pages : 183
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Book Description
NOUS AVONS ETUDIE LES MECANISMES RESPONSABLES DE LA PERTE DE COHERENCE DANS DES HETEROSTRUCTURES DE SEMICONDUCTEURS III-V PAR UNE TECHNIQUE LINEAIRE DE CORRELATION INTERFEROMETRIQUE DE LA DIFFUSION RAYLEIGH RESONANTE. CETTE TECHNIQUE REPOSE SUR L'EXCITATION D'UN ECHANTILLON PAR UNE PAIRE D'IMPULSIONS FEMTOSECONDES, COHERENTES, DE MEME INTENSITE ET DECALEES DANS LE TEMPS. LES INTERFERENCES ENTRE LES POLARISATIONS CREEES DANS L'ECHANTILLON PAR LA PAIRE D'IMPULSIONS PRODUISENT DES INTERFERENCES SUR L'EMISSION RESONANTE DU SYSTEME. LEUR CONTRASTE DECROIT AVEC LE RETARD ENTRE LES IMPULSIONS SUR UNE ECHELLE DE TEMPS DONNEE PAR LE TEMPS DE RELAXATION DE COHERENCE OU TEMPS DE DEPHASAGE T 2, DE L'ORDRE DE QUELQUES PICOSECONDES DANS LES HETEROSTRUCTURES DE SEMICONDUCTEURS. NOUS NOUS SOMMES D'ABORD INTERESSES A DES PUITS QUANTIQUES GAAS/AL XGA 1 - XAS PEU PROFONDS OU LA CONCENTRATION EN ALUMINIUM DANS L'ALLIAGE DE BARRIERE VARIE DE 18 A 1,5%. DANS CES PUITS QUANTIQUES, LES EXCITONS SONT DANS UN REGIME DE CONFINEMENT FAIBLE INTERMEDIAIRE ENTRE LES PUITS PROFONDS (2D) ET LE MATERIAU MASSIF (3D). GRACE A DES EXPERIENCES REALISEES POUR DIFFERENTES TEMPERATURES DE L'ECHANTILLON, NOUS AVONS ETUDIE L'INFLUENCE DE LA TRANSITION 2D-3D SUR LES MECANISMES DE DEPHASAGE PAR PHONONS. POUR LES PHONONS ACOUSTIQUES, NOUS METTONS EN EVIDENCE UNE TRANSITION MOLLE ALORS QUE POUR LES PHONONS OPTIQUES, NOUS OBSERVONS UNE RESONANCE DE COUPLAGE POUR LE PUITS X=3,3% OU LES EXCITONS DU PUITS ET DE LA BARRIERE SONT DISTANTS D'UN PHONON OPTIQUE. NOUS AVONS PAR AILLEURS ETUDIE UNE MICROCAVITE DE SEMICONDUCTEURS EN COUPLAGE FORT. DANS CETTE HETEROSTRUCTURE, LES ETATS PROPRES NE SONT PLUS DES EXCITONS MAIS DES ETATS MIXTES EXCITON-PHOTON, LES POLARITONS DE CAVITE. DANS CE SYSTEME, LA RELAXATION DE COHERENCE EST GOUVERNEE PAR DES MECANISMES DE DEPHASAGE DE TYPES TRES DIFFERENTS POUR LES COMPOSANTES EXCITON ET PHOTON, RESPECTIVEMENT. TOUT D'ABORD, PAR DES ETUDES A BASSE TEMPERATURE EN FONCTION DU DESACCORD EN ENERGIE ENTRE LES MODES EXCITON ET PHOTON, NOUS METTONS EN EVIDENCE LES SPECIFICITES DE LA RELAXATION DE COHERENCE DES POLARITONS DE CAVITE. NOUS AVONS DEVELOPPE UN CALCUL DE LA DIFFUSION RAYLEIGH RESONANTE D'UNE MICROCAVITE A PARTIR D'UN MODELE SEMI-CLASSIQUE DE DISPERSION LINEAIRE ET NOUS OBTENONS UN EXCELLENT ACCORD THEORIE/EXPERIENCE. PAR AILLEURS, PAR DES ETUDES EN FONCTION DE LA TEMPERATURE, NOUS AVONS EXAMINE LE DEPHASAGE DES POLARITONS ASSISTE PAR PHONONS ACOUSTIQUES. NOUS METTONS EN EVIDENCE LES LIMITES D'UN MODELE SEMI-CLASSIQUE POUR DECRIRE LA RELAXATION DE COHERENCE EN FONCTION DE LA TEMPERATURE ET NOUS REPRODUISONS NOS DONNEES EXPERIMENTALES A L'AIDE D'UN MODELE QUANTIQUE DE POLARITONS.
Author: Fedor T. Vasko
Publisher: Springer Science & Business Media
ISBN: 1461205352
Category : Technology & Engineering
Languages : en
Pages : 402
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Book Description
The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.
Author: David Larousserie
Publisher:
ISBN:
Category :
Languages : fr
Pages : 168
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Book Description
Author: Toshihide Takagahara
Publisher: Academic Press
ISBN: 0080525121
Category : Technology & Engineering
Languages : en
Pages : 508
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Book Description
Semiconductor nanostructures are attracting a great deal of interest as the most promising device with which to implement quantum information processing and quantum computing. This book surveys the present status of nanofabrication techniques, near field spectroscopy and microscopy to assist the fabricated nanostructures. It will be essential reading for academic and industrial researchers in pure and applied physics, optics, semiconductors and microelectronics. - The first up-to-date review articles on various aspects on quantum coherence, correlation and decoherence in semiconductor nanostructures
Author: Giovanni Agostini
Publisher: Newnes
ISBN: 044459549X
Category : Technology & Engineering
Languages : en
Pages : 829
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Book Description
Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
Author: Alexander V. Latyshev
Publisher: Elsevier
ISBN: 0128105135
Category : Technology & Engineering
Languages : en
Pages : 553
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Book Description
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author: R.T. Phillips
Publisher: Springer Science & Business Media
ISBN: 1475797486
Category : Science
Languages : en
Pages : 362
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Book Description
The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.
Author: A. Miller
Publisher: CRC Press
ISBN: 1000154378
Category : Science
Languages : en
Pages : 990
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Book Description
The development and application of low-dimensional semiconductors have been rapid and spectacular during the past decade. Ever improving epitaxial growth and device fabrication techniques have allowed access to some remarkable new physics in quantum confined structures while a plethora of new devices has emerged. The field of optoelectronics in particular has benefited from these advances both in terms of improved performance and the invention of fundamentally new types of device, at a time when the use of optics and lasers in telecommunications, broadcasting, the Internet, signal processing, and computing has been rapidly expanding. An appreciation of the physics of quantum and dynamic electronic processes in confined structures is key to the understanding of many of the latest devices and their continued development. Semiconductor Quantum Optoelectronics covers new physics and the latest device developments in low-dimensional semiconductors. It allows those who already have some familiarity with semiconductor physics and devices to broaden and expand their knowledge into new and expanding topics in low-dimensional semiconductors. The book provides pedagogical coverage of selected areas of new and pertinent physics of low-dimensional structures and presents some optoelectronic devices presently under development. Coverage includes material and band structure issues and the physics of ultrafast, nonlinear, coherent, intersubband, and intracavity phenomena. The book emphasizes various devices, including quantum wells, visible, quantum cascade, and mode-locked lasers; microcavity LEDs and VCSELs; and detectors and logic elements. An underlying theme is high-speed phenomena and devices for increased system bandwidths.
Author: Gabriela Slavcheva
Publisher: Springer Science & Business Media
ISBN: 3642124917
Category : Science
Languages : en
Pages : 338
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Book Description
The fundamental concept of quantum coherence plays a central role in quantum physics, cutting across disciplines of quantum optics, atomic and condensed matter physics. Quantum coherence represents a universal property of the quantum s- tems that applies both to light and matter thereby tying together materials and p- nomena. Moreover, the optical coherence can be transferred to the medium through the light-matter interactions. Since the early days of quantum mechanics there has been a desire to control dynamics of quantum systems. The generation and c- trol of quantum coherence in matter by optical means, in particular, represents a viable way to achieve this longstanding goal and semiconductor nanostructures are the most promising candidates for controllable quantum systems. Optical generation and control of coherent light-matter states in semiconductor quantum nanostructures is precisely the scope of the present book. Recently, there has been a great deal of interest in the subject of quantum coh- ence. We are currently witnessing parallel growth of activities in different physical systems that are all built around the central concept of manipulation of quantum coherence. The burgeoning activities in solid-state systems, and semiconductors in particular, have been strongly driven by the unprecedented control of coherence that previously has been demonstrated in quantum optics of atoms and molecules, and is now taking advantage of the remarkable advances in semiconductor fabrication technologies. A recent impetus to exploit the coherent quantum phenomena comes from the emergence of the quantum information paradigm.
Author:
Publisher: Elsevier
ISBN: 0080540953
Category : Technology & Engineering
Languages : en
Pages : 483
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
