Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si PDF Download
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Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
Author:
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Category :
Languages : en
Pages : 0
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Author:
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Category :
Languages : en
Pages : 0
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We have developed new approaches to synthesize superhard/ultrastrong thin films and coatings by chemical vapor deposition (CVD) of unimolecular precursors, and to monitor and characterize the film-growth process in situ and in real time. To this end, we have designed and constructed an ultrahigh vacuum CVD chamber fitted with energy-dispersive x-ray reflectivity (XRR) and multiple- beam optical stress sensor (MOSS) for in situ monitoring of surface morphology and stress evolution of the films under growth. Both of these techniques were applied to the CVD growth of boron and GaN films. We have synthesized novel precursors of C3N3P, Si4CN4, LiBC4N4, BC3N3, BeC2N2, MgC2N2 for CVD growth of films with properties of superhardness. We have also deposited thin films by CVD with the composition of Zr-B-Si-N via reactions of Zr(BH4)4 with SiH4, and Zr(BH4)4 with N(SiH3)4. The elastic constants cli and c44 of these films measured by Brillouin scattering in collaboration with Prof. Sooryakumar of Ohio State University produced results suggesting that films and coatings based on the Zr-B-Si-N system exhibit promising superhard properties.
Author: Rahul Janardan Sankhe
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Book Description
Author: Zhiquan Huang
Publisher:
ISBN:
Category : Ellipsometry
Languages : en
Pages : 467
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Book Description
Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si:H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.
Author: J.F. Bussière
Publisher: Springer Science & Business Media
ISBN: 1489906703
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
There is a great deal of interest in extending nondestructive technologies beyond the location and identification of cracks and voids. Specifically there is growing interest in the application of nondestructive evaluation (NOEl to the measurement of physical and mechanical properties of materials. The measurement of materials properties is often referred to as materials characterization; thus nondestructive techniques applied to characterization become nondestructive characterization (NDCl. There are a number of meetings, proceedings and journals focused upon nondestructive technologies and the detection and identification of cracks and voids. However, the series of symposia, of which these proceedings represent the fourth, are the only meetings uniquely focused upon nondestructive characterization. Moreover, these symposia are especially concerned with stimulating communication between the materials, mechanical and manufacturing engineer and the NDE technology oriented engineer and scientist. These symposia recognize that it is the welding of these areas of expertise that is necessary for practical development and application of NDC technology to measurements of components for in service life time and sensor technology for intelligent processing of materials. These proceedings are from the fourth international symposia and are edited by c.o. Ruud, J. F. Bussiere and R.E. Green, Jr. . The dates, places, etc of the symposia held to date area as follows: Symposia on Nondestructive Methods for TITLE: Material Property Determination DATES: April 6-8, 1983 PLACE: Hershey, PA, USA CHAIRPERSONS: C.O. Ruud and R.E. Green, Jr.
Author: J. Kleiman
Publisher: Springer Science & Business Media
ISBN: 1402025955
Category : Science
Languages : en
Pages : 553
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Book Description
This publication presents the proceedings of ICPMSE-6, the sixth international conference on Protection of Materials and Structures from Space Environment, held in Toronto May 1-3, 2002. The ICPMSE series of meetings became an important part of the LEO space community since it was started in 1991. Since then, the meeting has grown steadily, attracting a large number of engineers, researchers, managers, and scientists from industrial companies, scientific institutions and government agencies in Canada, U. S. A. , Asia, and Europe, thus becoming a true international event. This year’s meeting is gaining even stronger importance with the resumption of the ISS and other space projects in LEO, GEO and Deep Space. To reflect on these activities, the topics in the program have been extended to include protection of materials in GEO and Deep Space. The combination of a broad selection of technical and scientific topics addressed by internationally known speakers with the charm of Toronto and the hospitality of the organizers brings participants back year after year. The conference was hosted and organized by Integrity Testing Laboratory Inc. (ITL), and held at the University of Toronto’s Institute for Aerospace Studies (UTIAS). The meeting was sponsored by the Materials and Manufacturing Ontario (MMO) and the CRESTech, two Ontario Centres of Excellence; Air Force Office of Scientific Research (AFOSR/NL); MD Robotics; EMS Technologies; The Integrity Testing Laboratory (ITL); and the UTIAS.
Author: J. Cortadella
Publisher: Springer Science & Business Media
ISBN: 3642559891
Category : Technology & Engineering
Languages : en
Pages : 279
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Book Description
This book is the result of a long friendship, of a broad international co operation, and of a bold dream. It is the summary of work carried out by the authors, and several other wonderful people, during more than 15 years, across 3 continents, in the course of countless meetings, workshops and discus sions. It shows that neither language nor distance can be an obstacle to close scientific cooperation, when there is unity of goals and true collaboration. When we started, we had very different approaches to handling the mys terious, almost magical world of asynchronous circuits. Some were more theo retical, some were closer to physical reality, some were driven mostly by design needs. In the end, we all shared the same belief that true Electronic Design Automation research must be solidly grounded in formal models, practically minded to avoid excessive complexity, and tested "in the field" in the form of experimental tools. The results are this book, and the CAD tool petrify. The latter can be downloaded and tried by anybody bold (or desperate) enough to tread into the clockless (but not lawless) domain of small-scale asynchronicity. The URL is http://www.lsi. upc. esr j ordic/petrify. We believe that asynchronous circuits are a wonderful object, that aban dons some of the almost militaristic law and order that governs synchronous circuits, to improve in terms of simplicity, energy efficiency and performance.
Author: Mario Birkholz
Publisher: John Wiley & Sons
ISBN: 3527607048
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
With contributions by Paul F. Fewster and Christoph Genzel While X-ray diffraction investigation of powders and polycrystalline matter was at the forefront of materials science in the 1960s and 70s, high-tech applications at the beginning of the 21st century are driven by the materials science of thin films. Very much an interdisciplinary field, chemists, biochemists, materials scientists, physicists and engineers all have a common interest in thin films and their manifold uses and applications. Grain size, porosity, density, preferred orientation and other properties are important to know: whether thin films fulfill their intended function depends crucially on their structure and morphology once a chemical composition has been chosen. Although their backgrounds differ greatly, all the involved specialists a profound understanding of how structural properties may be determined in order to perform their respective tasks in search of new and modern materials, coatings and functions. The author undertakes this in-depth introduction to the field of thin film X-ray characterization in a clear and precise manner.
Author: Diederik Depla
Publisher: Springer Science & Business Media
ISBN: 3540766642
Category : Technology & Engineering
Languages : en
Pages : 584
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Book Description
In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.
