Rare-Earth-Doped Materials and Devices VII PDF Download
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Languages : en
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Author: Shibin Jiang
Publisher: Society of Photo Optical
ISBN: 9780819447906
Category : Technology & Engineering
Languages : en
Pages : 168
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Book Description
First and second conferences have title: Rare-earth-doped devices.
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Category : Laser materials
Languages : en
Pages : 206
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Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
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Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Hong Li
Publisher: John Wiley & Sons
ISBN: 1118408071
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
This volume will summarize the most recent development in experimentation, computation, and theory on chemistry of glass forming melt, including melt structure modeling and melt structure and characterizations. This volume provides a timely update on the advances in glass basic science research and development.
Author: Kevin Peter O'Donnell
Publisher: Springer
ISBN: 9789048128761
Category : Technology & Engineering
Languages : en
Pages : 355
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This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Volkmar Dierolf
Publisher: Materials Research Society
ISBN: 9781605113197
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium V, "Rare-Earth Doping of Advanced Materials for Photonic Applications," took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides, and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
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Languages : en
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