Rare Earth and Transition Metal Doping of Semiconductor Materials PDF Download
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Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
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Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Author: Sahar Zinatloo-Ajabshir
Publisher: Elsevier
ISBN: 0323899587
Category : Technology & Engineering
Languages : en
Pages : 413
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Book Description
Advanced Rare Earth-Based Ceramic Nanomaterials focuses on recent advances related to preparation methods and applications of advanced rare earth-based ceramic nanomaterials. Different approaches for synthesizing rare earth-based ceramic nanomaterials are discussed, along with their advantages and disadvantages for applications in various fields. Sections cover rare earth-based ceramic nanomaterials like ceria and rare earth oxides (R2O3), rare earth vanadates, rare earth titanates, rare earth zirconates, rare earth stannates, rare earth-based tungstates, rare earth-based manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds. - Reviews the chemistry and processing of rare earth doped ceramic nanomaterials and their characteristics and applications - Covers a broad range of materials, including ceria and rare earth oxides (R2O3), vanadates, titanates, zirconates, stannates, tungstates, manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds - Includes different approaches to synthesizing each family of rare earth-based ceramic nanomaterials, along with their advantages and disadvantages - Provides green chemistry-based methods for the preparation of advanced rare earth-based ceramic nanomaterials
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
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Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author:
Publisher:
ISBN:
Category : Laser materials
Languages : en
Pages : 206
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Book Description
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1351083082
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
Author: Shibin Jiang
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Science
Languages : en
Pages : 202
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Book Description
Author: Hongxing Jiang
Publisher: CRC Press
ISBN: 9781560329725
Category : Technology & Engineering
Languages : en
Pages : 430
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Book Description
The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.
Author: Silvia Richter
Publisher: Springer Science & Business Media
ISBN: 3540852263
Category : Science
Languages : en
Pages : 906
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Book Description
Proceedings of the14th European Microscopy Congress, held in Aachen, Germany, 1-5 September 2008. Jointly organised by the European Microscopy Society (EMS), the German Society for Electron Microscopy (DGE) and the local microscopists from RWTH Aachen University and the Research Centre Jülich, the congress brings together scientists from Europe and from all over the world. The scientific programme covers all recent developments in the three major areas of instrumentation and methods, materials science and life science.
