Rare-Earth Doping of Advanced Materials for Photonic Applications: PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Rare-Earth Doping of Advanced Materials for Photonic Applications: PDF full book. Access full book title Rare-Earth Doping of Advanced Materials for Photonic Applications: by V. Dierolf. Download full books in PDF and EPUB format.
Author: V. Dierolf
Publisher: Cambridge University Press
ISBN: 9781107408487
Category : Technology & Engineering
Languages : en
Pages : 314
Get Book Here
Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
Get Book Here
Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
Get Book Here
Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Volkmar Dierolf
Publisher: Materials Research Society
ISBN: 9781605113197
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
Symposium V, "Rare-Earth Doping of Advanced Materials for Photonic Applications," took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides, and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
Author:
Publisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 115
Get Book Here
Book Description
Author: Guokui Liu
Publisher: 清华大学出版社有限公司
ISBN: 9787302074090
Category : Science
Languages : en
Pages : 636
Get Book Here
Book Description
Aimed at researchers and graduate students, this book provides up-to-date information about the electronic interactions that impact the optical properties of rare earth ions in solids. Its goal is to establish a connection between fundamental principles and the materials properties of rare-earth activated luminescent and laser optical materials. The theoretical survey and introduction to spectroscopic properties covers electronic energy level structure, intensities of optical transitions, ion-phonon interactions, line broadening, and energy transfer and up-conversion. An important aspect of the book lies in its deep and detailed discussions of materials properties and the potential of new applications such as optical storage, information processing, nanophotonics, and molecular probes that have been identified in recent experimental studies. This volume will be a valuable reference book on advanced topics of rare earth spectroscopy and materials science.
Author: Y. Fujiwara
Publisher:
ISBN: 9781510803350
Category :
Languages : en
Pages : 25
Get Book Here
Book Description
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
Get Book Here
Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
Get Book Here
Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Materials that emit light when optically or electrically pumped have been of great interest to the high technology industry for a long time. Displays, LED's and optical amplifiers are a few of the devices that are widely desired. Until recently semiconductors and high temperature glass technologies have dominated the industry for these kinds of products. Elaborate systems like molecular beam epitaxy, vacuum sputtering and chemical vapor deposition, are examples of process that have been employed to fabricate useful thin film materials for these devices. There exists, however, a process that can produce high quality thin films without the need for expensive vacuum systems and is done at room temperature and standard pressure. This is the sol gel method. The sol gel process involves mixing of liquid chemicals, allowing a reaction to happen where molecules form a new material that is suspended within the liquid system. The formation of a network matrix from these molecules attaching to each is the basis of the new solid material. Utilizing this technology, silicon dioxide was formed at room temperature from liquid precursors and the ability to dope the sol gel uniformly with optically active rare earth ions is the thrust of this work. The Er3 ion is of particular interest due to the ability to emit light in the green, red and infrared wavelengths. Erbium doped waveguide and fiber amplifiers use this mechanism to amplify light signals in the telecommunications wavelength range (1520-1580 nm). Erbium doped aluminosilicate symmetric waveguides were prepared by the sol gel method on SiO2/Si substrates. Ridge channel waveguides were formed into the top SiO2 cladding layer by ICP plasma etch with NF3 /Ar2 gasses. Infrared and visible upconversion luminescence emission using 980 nm pump excitation was detected. Waveguide loss measurements at 980 nm and 1531 nm wavelengths yielded losses of 1.7 dB/cm and 4.93 dB/cm, respectively. Optical gain was detected over the 1.5 micron wavelength range with signal enhancement of 5.89 dB in a guide 1.1 cm long yielding 0.484 dB gain at 1531 nm wavelength.
Author: Susan B. Halpern
Publisher:
ISBN:
Category :
Languages : en
Pages : 318
Get Book Here
Book Description
