Rapid Thermal Annealing of Silicon Implanted Gallium Arsenide PDF Download
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Author: John Stuart Kleine
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 122
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Book Description
Author: John Stuart Kleine
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 122
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Book Description
Author: Mark R. Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
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Book Description
Author: LeNore Louise Lehman
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
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Book Description
Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374
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Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author: Alison Schary
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 654
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Author: Walter George Opyd
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Author: Chi-Chien Ho
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Author: Judy Lynn Hoyt
Publisher:
ISBN:
Category :
Languages : en
Pages : 225
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Author: Samuel C. Ling
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
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Book Description
Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Author: P. Kordoš
Publisher: Trans Tech Publications Ltd
ISBN: 3035739706
Category : Technology & Engineering
Languages : en
Pages : 376
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Book Description
Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988
