Author: E. W. J. Mitchell
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Category :
Languages : en
Pages : 0
Book Description
Radiation damage and defects in semiconductors : proceedings of the international conference
Author: E. W. J. Mitchell
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Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Radiation Damage and Defects in Semiconductors
Author: E.W.J. Mitchell
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ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Radiation Damage and Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Radiation Damage and Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Radiation Damage and Defects in Semiconductors
Author: J. E. Whitehouse
Publisher:
ISBN:
Category :
Languages : en
Pages : 468
Book Description
The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 468
Book Description
The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. (Author).
Radiation Damage and Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Radiation Damage in Semiconductors
Author: International Conferenceon the Physics of Semiconductors
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 426
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 426
Book Description
Radiation Damage and Defects in Semiconductors
Author:
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ISBN:
Category : Science
Languages : en
Pages : 480
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 480
Book Description
Defects and Radiation Effects in Semiconductors, 1978 : Invited and Contributed Papers from the International Conference on Defects and Radiation Effects in Semiconductors Held in Nice, 11-14 September, 1978
Author:
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Category :
Languages : en
Pages :
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Publisher:
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Category :
Languages : en
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Book Description
Radiation Damage in Semiconductors
Author: International Union of Pure and Applied Physics
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description