Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide PDF Download
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Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
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Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
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Author: Siu Sing Chan
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
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Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
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Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1014
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Author:
Publisher: Academic Press
ISBN: 0080577261
Category : Computers
Languages : en
Pages : 407
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Advances in Electronics and Electron Physics
Author: Fred H. Eisen
Publisher: Gordon & Breach Publishing Group
ISBN:
Category : Science
Languages : en
Pages : 488
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Author: A. H. Agajanian
Publisher: Ifi/Plenum
ISBN:
Category : Reference
Languages : en
Pages : 980
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Author: Walter M. Gibson
Publisher:
ISBN:
Category : Language Arts & Disciplines
Languages : en
Pages : 726
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Author: Walter M. Gibson
Publisher:
ISBN:
Category : Collisions (Physics)
Languages : en
Pages : 632
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Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
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