Properties of Impurity States in Superlattice Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Properties of Impurity States in Superlattice Semiconductors PDF full book. Access full book title Properties of Impurity States in Superlattice Semiconductors by C.Y. Fong. Download full books in PDF and EPUB format.
Author: C.Y. Fong
Publisher: Springer Science & Business Media
ISBN: 1468455532
Category : Science
Languages : en
Pages : 350
Get Book Here
Book Description
A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Author: C.Y. Fong
Publisher: Springer Science & Business Media
ISBN: 1468455532
Category : Science
Languages : en
Pages : 350
Get Book Here
Book Description
A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Author: D.J. Lockwood
Publisher: Springer
ISBN: 1489936955
Category : Science
Languages : en
Pages : 592
Get Book Here
Book Description
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Author: Claus F. Klingshirn
Publisher: Springer Science & Business Media
ISBN: 3642283624
Category : Science
Languages : en
Pages : 867
Get Book Here
Book Description
The updated and enlarged new edition of this book provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV. It includes coverage of linear and nonlinear optical properties, dynamics, magneto- and electrooptics, high-excitation effects, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible. The subjects covered extend from physics to materials science and optoelectronics. New or updated chapters add coverage of current topics, while the chapters on bulk materials have been revised and updated.
Author: J.P. Nougier
Publisher: Elsevier
ISBN: 1483295230
Category : Technology & Engineering
Languages : en
Pages : 523
Get Book Here
Book Description
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Author: Marius Grundmann
Publisher: Springer Nature
ISBN: 3030515699
Category : Technology & Engineering
Languages : en
Pages : 905
Get Book Here
Book Description
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Author: Gerhard Fasol
Publisher: Springer Science & Business Media
ISBN: 1475765657
Category : Science
Languages : en
Pages : 661
Get Book Here
Book Description
Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Author: Raphael Tsu
Publisher: Elsevier
ISBN: 0080968147
Category : Technology & Engineering
Languages : en
Pages : 346
Get Book Here
Book Description
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Author: Claude Weisbuch
Publisher: Elsevier
ISBN: 9780127426808
Category : Science
Languages : en
Pages : 268
Get Book Here
Book Description
A review of the fundamentals of quantified semiconductor structures (first seen as an introductory chapter in Volume 24 of "Semiconductors and Semimetals"), which covers the basics of electronic states, optical interactions and quantum transport in two-dimensional quantified systems.
Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Get Book Here
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Author: David Cherns
Publisher: Springer Science & Business Media
ISBN: 1461305276
Category : Medical
Languages : en
Pages : 413
Get Book Here
Book Description
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
