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Author: Tim Searle
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages :
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Book Description
Author: Tim Searle
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages :
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Book Description
Author: T. M. Searle
Publisher: Inst of Engineering & Technology
ISBN: 9780863416415
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
A useful data review of the important properties of a-Si, a knowledge of which is necessary for the planning, modelling and interpretation of experiments. - Engineering Science and Engineering Journal
Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9789971506193
Category : Science
Languages : en
Pages : 742
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Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Author:
Publisher: INSPEC
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 688
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Book Description
Author:
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
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Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
Author: David Adler
Publisher: Springer Science & Business Media
ISBN: 1489922601
Category : Science
Languages : en
Pages : 448
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Book Description
The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate rials. It has since played an important role in promoting the und er standing of disordered matter in general. An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during 1982-83 with distinguished speakers from universities and industry. These events were free and open to the public ,and were attended by many representatives of the scientific community. The lectures themselves were highly successful inasmuch as they provided not only formal instruction but also an opportunity for vigorous and stimulating debate. That last element could not be captured within the pages of a book I but the lectures concentrated on the latest advances in the field I which is why their essential contents are he re reproduced in collective form. Together they constitute an interdisciplinary status report of the field. The speakers brought many different viewpoints and a variety of back ground experiences io bear on the problems involved I but though language and conventions vary I the essential unity of the concerns is very clear I as indeed are the ultimate benefits of the many-sided approach.
Author: Arun Madan
Publisher: Elsevier
ISBN: 0080924433
Category : Science
Languages : en
Pages : 558
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Book Description
This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This book will serve as an excellent reference source for solid state scientists and engineers, and as a useful self-contained introduction to the field for graduate students.
Author: D. K. Biegelsen
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 39
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Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
Author: Robert A. Street
Publisher: Springer Science & Business Media
ISBN: 3662041413
Category : Technology & Engineering
Languages : en
Pages : 429
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Book Description
This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 981453191X
Category : Science
Languages : en
Pages : 1153
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Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
