Properties and Structure of Dislocations in Semiconductors PDF Download
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Author:
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Languages : en
Pages : 499
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Category :
Languages : en
Pages : 499
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Author: S. G. Roberts
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 496
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Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Author: Centre national de la recherche scientifique (France)
Publisher:
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Category : Semiconductors
Languages : en
Pages : 532
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Category :
Languages : en
Pages :
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Languages : en
Pages :
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Author: Hiroshi Suzuki
Publisher: CRC Press
ISBN: 1466561343
Category : Technology & Engineering
Languages : en
Pages : 691
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Book Description
This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.
Author: D. Hull
Publisher: Cambridge University Press
ISBN: 1107393183
Category : Technology & Engineering
Languages : en
Pages : 334
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Book Description
This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
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Languages : en
Pages :
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Category :
Languages : en
Pages :
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Book Description
Author: S. G. Roberts
Publisher: CRC Press
ISBN: 9780854980604
Category : Dislocation in metals
Languages : en
Pages : 496
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Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
