Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors PDF Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580

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Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors PDF Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580

Get Book Here

Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Proceedings of the 17th International Conference on Defects in Semiconductors

Proceedings of the 17th International Conference on Defects in Semiconductors PDF Author: Helmut Heinrich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 724

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Book Description


Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)

Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes) PDF Author: E M Anastassakis
Publisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768

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Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

SERI Photovoltaic Advanced Research and Development Bibliography, 1982-1985

SERI Photovoltaic Advanced Research and Development Bibliography, 1982-1985 PDF Author:
Publisher:
ISBN:
Category : Photovoltaic power generation
Languages : en
Pages : 180

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Book Description


The Physics of Instabilities in Solid State Electron Devices

The Physics of Instabilities in Solid State Electron Devices PDF Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923446
Category : Science
Languages : en
Pages : 474

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Book Description
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.

Physics of Semiconductor Devices

Physics of Semiconductor Devices PDF Author: V. K. Jain
Publisher: Springer Science & Business Media
ISBN: 3319030027
Category : Science
Languages : en
Pages : 841

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Book Description
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Localization, Interaction, and Transport Phenomena

Localization, Interaction, and Transport Phenomena PDF Author: Bernhard Kramer
Publisher: Springer Science & Business Media
ISBN: 3642825168
Category : Technology & Engineering
Languages : en
Pages : 273

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Book Description
When we first had the idea of organizing the International Conference on Localization, Interaction, and Transport Phenomena in Impure Metals we expected to bring together at most a hundred physicists. The fact that more than a hundred and fifty participated clearly shows that the topic of the meeting was of great interest to an important fraction of the solid state physics community. In fact, remembering that the localization problem is already a quarter of a century old, it is quite amazing to see how, during the last five years, new and very successful theoretical models emerged which were confirmed by sometimes ingenious experiments. The number of groups involved in the study of localization or related problems in the transport properties of matter even seems to be increasing. The main purpose of this conference was to review the present status of activities in the localization field and hopefully to stimulate new ideas. A study of the Conference Proceedings ascertains that we were successful in reaching these two goals. Moreover, the presence of the authors of the about ninety contributed papers published in the supplement volume assured the very lively atmosphere which characterizes successful conferences. We think that this was the most important ingredient for achieving the second goal in particular. We thank our sponsors for their support, which was given unreluctantly and generously. Especially, we gratefully acknowledge the hospitality of the PTB and the city of Braunschweig during the time of the meeting.

Hydrogen in Semiconductors

Hydrogen in Semiconductors PDF Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655

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Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Introduction to Surface and Superlattice Excitations

Introduction to Surface and Superlattice Excitations PDF Author: Michael G. Cottam
Publisher: Cambridge University Press
ISBN: 0521321549
Category : Mathematics
Languages : en
Pages : 345

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Book Description
Cottam and Tilley provide an introduction to the properties of wave-like excitations associated with surfaces and interfaces. The emphasis is on acoustic, optic and magnetic excitations, and, apart from one section on liquid surfaces, the text concentrates on solids. The important topic of superlattices is also discussed, in which the different kinds of excitation are considered from a unified point of view. Throughout the book the authors are careful to relate theory and experiment and all of the most important experimental techniques are described. The theoretical treatment assumes only a knowledge of undergraduate physics, except for Green function methods that are used in a few sections; these methods are developed in an appendix. The book also contains extensive references to enable the reader to consult the research and review literature, and problems are provided in each of the main chapters to allow the reader to develop topics presented in the text.

Theory of Holes and Excitons in Semiconductor Heterostructures

Theory of Holes and Excitons in Semiconductor Heterostructures PDF Author: David A. Broido
Publisher:
ISBN:
Category : Energy-band theory of solids
Languages : en
Pages : 348

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Book Description